High-efficiency light-emitting diode and preparation method based on high-temperature diffusion to form p-type scaln layer
A light-emitting diode, high-temperature diffusion technology, applied in the field of microelectronics, can solve the problem of low p-type carrier concentration, achieve good crystal quality, improve luminous efficiency, and maintain the effect of crystal quality
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Embodiment 1
[0046] See figure 1 , figure 1 It is a structural schematic diagram of a high-efficiency light-emitting diode based on high-temperature diffusion to form a p-type ScAlN layer provided by an embodiment of the present invention. This embodiment provides a high-efficiency light-emitting diode based on high-temperature diffusion to form a p-type ScAlN layer, and the high-efficiency light-emitting diode includes:
[0047] substrate layer 1;
[0048] The nucleation layer 2 is arranged on the substrate layer 1;
[0049] n-type GaN layer 3, disposed on the nucleation layer 2;
[0050] The multi-quantum well layer 4 is arranged on the n-type GaN layer 3, and the multi-quantum well layer 4 includes several Al x Ga 1-x N well layer and several Al y Ga 1-y N barrier layer, and several Al x Ga 1-x N well layer and several Al y Ga 1-y N barrier layers are stacked alternately on the n-type GaN layer 3 in sequence;
[0051] The electron blocking layer 5 is arranged on the multi-qu...
Embodiment 2
[0064] See Figure 2a-Figure 2i , Figure 2a-Figure 2i It is a schematic diagram of the preparation process of a high-efficiency light-emitting diode based on high-temperature diffusion to form a p-type ScAlN layer provided by the embodiment of the present invention. On the basis of the above-mentioned embodiments, the present invention also provides a high-efficiency light-emitting diode based on high-temperature diffusion to form a p-type ScAlN layer. A method for preparing a diode, the method for preparing a high-efficiency light-emitting diode includes:
[0065] Step 1. Select the substrate layer 1.
[0066] Specifically, the substrate layer 1 is pre-treated by heating and high-temperature nitriding.
[0067] Further, the substrate layer 1 may be a c-plane sapphire substrate layer.
[0068] Step 2, see Figure 2a , forming a nucleation layer 2 on the substrate layer 1 .
[0069] Specifically, the nucleation layer 2 is grown on the substrate layer 1 by a MOCVD (Metal-o...
Embodiment 3
[0098] On the basis of the above-mentioned embodiments, the present invention provides a method for preparing a light-emitting diode with a light emitting wavelength of 280 nm, the method comprising:
[0099]In Step 1, the substrate layer 1 is pretreated.
[0100] 1a) After cleaning the c-plane sapphire substrate layer, place it in a metal-organic chemical vapor deposition (MOCVD) reaction chamber, and reduce the vacuum degree of the reaction chamber to 3×10 -2 Torr: Introduce hydrogen gas into the reaction chamber, and under the condition that the pressure of the MOCVD reaction chamber reaches 30 Torr, heat the c-plane sapphire substrate layer to 850°C and keep it for 15 minutes to complete the heat treatment of the c-plane sapphire substrate layer;
[0101] 1b) Place the heat-treated c-plane sapphire substrate layer in a reaction chamber at a temperature of 900° C., inject ammonia gas with a flow rate of 3200 sccm, and continue the nitriding treatment for 5 minutes to comple...
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Abstract
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