Semiconductor laser chip capable of resisting electrostatic shock and process

An electrostatic shock and semiconductor technology, applied in the field of semiconductor laser chips and processes, can solve the threat of electrostatic shock to optical chips, weak and unavoidable anti-static shock capabilities, and improve the ability to resist ESD. The chip process is simple and improved. Effect of high temperature characteristics

Active Publication Date: 2020-12-25
武汉敏芯半导体股份有限公司
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

Compared with the electronic chip, the size of the optical chip is small and it is difficult to integrate a special electrostatic discharge circuit on the chip. At the same time, due to the small size of the optical chip, the ability to resist static shock is far weaker than that of the larger electronic chip. Therefore, the optical chip

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  • Semiconductor laser chip capable of resisting electrostatic shock and process
  • Semiconductor laser chip capable of resisting electrostatic shock and process
  • Semiconductor laser chip capable of resisting electrostatic shock and process

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[0054]In order to make the objectives, technical solutions and advantages of the present invention clearer, the following further describes the present invention in detail with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, but not to limit the present invention.

[0055]It should be noted that the implementation manners that are not shown or described in the drawings are in the form known to those of ordinary skill in the art. In addition, although this article provides an example of a parameter containing a specific value, it should be understood that the parameter does not need to be exactly equal to the corresponding value, but can be approximated to the corresponding value within acceptable error tolerances or design constraints. In addition, the specific materials, thickness and other parameters mentioned in the following embodiments are only for illustrat...

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Abstract

The invention discloses a semiconductor laser chip capable of resisting electrostatic impact, and the chip is characterized in that an electrode table-board region of the semiconductor laser chip is provided with circular truncated cone structures which are arranged in an array, the interior of each circular truncated cone structure is an N type reverse layer, and the outer wall of the periphery of each circular truncated cone is sequentially coated with an insulating dielectric layer and a P surface electrode layer; a highly-doped P type contact layer and an annular P surface electrode layersequentially cover the N type reverse layer at the top of the circular truncated cone; and the electrode table-board region below the circular truncated cone structure sequentially comprises a lower highly-doped P type contact layer, a P type upper cladding layer and a quantum well active area from top to bottom. When a large number of charges are injected, the electrostatic charges can be leakedthrough a plurality of channels, and the ESD resistance of the chip is improved.

Description

technical field [0001] The invention relates to a semiconductor laser, in particular to a semiconductor laser chip and a process for resisting electrostatic shock. Background technique [0002] Both semiconductor laser chips and electric chips are static-sensitive devices, and they are faced with the threat of four modes of electrostatic shock (Electro-Static discharge ESD) in the production, testing, transportation, packaging and use of chips. These four modes of ESD are human body discharge mode, machine mode, component charging mode, and electric field induction mode, among which the human body discharge mode and machine mode have the greatest impact on semiconductor laser chips. [0003] Taking the human body discharge mode and ridge waveguide type 25G 1310nm DFB optical communication chip as an example, when the human body carries a large amount of electrostatic charge and touches the laser chip or the packaged TO pin, the electrostatic charge will mainly be loaded on t...

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Application Information

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IPC IPC(8): H01S5/042H01S5/343H01S5/22H01S5/00H01S5/024
CPCH01S5/0042H01S5/02461H01S5/22H01S5/343H01S5/04254H01S5/04256
Inventor 魏思航王任凡
Owner 武汉敏芯半导体股份有限公司
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