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Broadband and wide-angle perfect absorber based on mxene and its preparation method

A perfect absorption, wide-angle technology, applied in the field of optical materials, can solve the problems of low flux, expensive technology, hindering the wide application of devices, etc., to achieve the effect of easy regulation, lower production cost, and simple and fast preparation method

Active Publication Date: 2022-03-15
THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although it shows high absorption efficiency, photolithographic fabrication, low-throughput, and expensive techniques hinder the widespread application of metamaterial-based devices

Method used

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  • Broadband and wide-angle perfect absorber based on mxene and its preparation method
  • Broadband and wide-angle perfect absorber based on mxene and its preparation method
  • Broadband and wide-angle perfect absorber based on mxene and its preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] This embodiment provides a MXENE-based wideband and wide-angle perfect absorbent, which is schematically shown figure 1 As shown in SiO 2 The multilayer structure on / Si substrate 1, the multilayer structure from the bottom to top, and the MXENE backplane layer 2, the PMMA spacer layer 3, and the gold nanoparticle layer 4 are sequentially.

[0034] Among them, the thickness of the MXENE backplane layer 2 is 180 nm, the thickness of the PMMA spacer layer 3 is 40 nm, and the gold nanoparticle layer 4 is a single layer randomly arranged gold nanoparticle, the size of the gold nanoparticle is different, the particle size range is 20- 100 nm, the golden nanoparticle layer 4 covers the coverage of the PMMA spacer layer 3 of 75%.

[0035] This embodiment also provides the preparation method of the above-mentioned perfect absorber, steps below:

[0036] (1) Preparation of in situ etching MXENE

[0037] The HCl + LIF solution was configured: 1.0 g of LiF and 20 ml of HCl (6 m) were...

Embodiment 2

[0051] This embodiment provides a MXENE-based wideband and wide-angle perfect absorbent, and the difference from Example 1 is only that the thickness of the MXENE backplane layer is 144 nm.

[0052] The absorption of the absorber is measured under the same conditions. Figure 8 Indicated.

Embodiment 3

[0054] This embodiment provides a MXENE-based wideband and wide-angle perfect absorbent body, and the difference from Example 1 is only that the thickness of the PMMA spacer layer is 72 nm.

[0055] The absorption of the absorber is measured under the same conditions. Figure 9 Indicated.

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Abstract

Embodiments of the present invention provide a Mxene-based broadband and wide-angle perfect absorber and a preparation method thereof, the perfect absorber is a multilayer structure arranged on a substrate, and the multilayer structure is an Mxene backplane layer from bottom to top , a spacer layer and a gold nanoparticle layer. The Mxene-based broadband and wide-angle perfect absorber provided in the embodiment of the present invention can achieve an absorbance greater than 90% in the wavelength range of 300 to 1800 nm by adopting a specific Mxene backplane layer-spacer layer-gold nanoparticle layer structure, and Independent of incident light angle. The preparation method of the perfect absorber provided by the embodiment of the present invention is simple and fast, all of which are prepared by spin coating or drip coating solution, which is easy to control, can ensure product quality and reduce production costs, and is beneficial to the popularization and application of the perfect absorber.

Description

Technical field [0001] The present invention relates to the field of optical materials, and more particularly to MXENE-based wideband and wide-angle perfect absorbent and preparation methods thereof. Background technique [0002] Perfect absorption of electromagnetic waves has extraordinary applications in optical chemistry, especially in terms of the generation and injection of thermal electrons induced by plasma, and also, in the communication system, it can be very low in the communication system. Energy consumption achieves ultra-fast switching of high optical modulation and information signals. Electromagnetic shielding, thermal photovoltaic cells, photoelectric detection, and many other important applications are highly dependent on the perfect absorption of electromagnetic waves. [0003] The artificial structural material or super material has obtained perfect light absorption due to its impedance matching with free space and dielectric loss during resonance. Although it ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G02B5/00G02B1/00
CPCG02B5/003G02B5/008G02B1/002
Inventor 王吉王晓莉唐智勇
Owner THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
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