Semiconductor device

Abstract

Devices and methods are described herein that obviate the need for a read assist circuit. In one example, a semiconductor device includes a source region and a drain region formed above a substrate. Aburied insulator (BI) layer is formed beneath either the source region or the drain region. A first nano-sheet is formed (i) horizontally between the source region and the drain region and (ii) vertically above the BI layer. The BI layer reduces current flow through the first nano-sheet.

Description

technical field [0001] The techniques described in this disclosure relate generally to electronic systems, and more specifically to increasing the read margin of electronic devices using partially buried insulator (BI) nano-sheet devices. Background technique [0002] Metal oxide semiconductor field effect transistors (MOSFETs) are semiconductor devices commonly used in both digital and analog circuits, including static random access memory (SRMA) devices. Metal oxide semiconductor field effect transistors are commonly used to switch and amplify electronic signals within electronic devices. A typical MOSFET includes source, drain, and gate electrodes. Energization of the gate electrode causes current to flow from the source through a channel region to the drain. The gate electrode is characterized by channel length and width. As electronic devices become smaller and smaller, the size of the channel length of MOSFETs is reduced. However, such a reduction in channel length...

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Problems solved by technology

However, the reduction in gate length can lead to short channel effects such as current leakage, surface scattering, velocity saturation, impact ionization, threshold voltage variations, and / or hot carrier effects

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