A method for the controllable growth of two-dimensional semiconductor thin films by supercritical carbon dioxide pulses
A two-dimensional semiconductor and carbon dioxide technology, applied in the direction of gaseous chemical plating, metal material coating process, coating, etc., can solve the problems of slow deposition rate and difficulty in reaching mass production level, and achieve reduced preparation costs and precise film thickness , the effect of less environmental pollution
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example 1
[0044] Weigh 50mg molybdenum hexacarbonyl (Mo(CO) 6 ) is the metal precursor placed in the precursor dissolution tank; the temperature is 40 ℃, the pressure is 15MPa supercritical carbon dioxide dissolved; 1 × 1cm 2 SiO 2 The / Si carrier is placed in the pressure relief nucleation and reaction zone; the dissolved Mo(CO) 6 The supercritical carbon dioxide mixture enters the pressure relief nucleation and reaction zone with a flow rate of 150sccm and a pulse time of 30s; inject supercritical carbon dioxide into the pressure relief nucleation and reaction zone, keep the temperature at 50°C and the pressure at 20MPa for 1min; Open the bypass to quickly reduce the pressure relief nucleation and reaction zone pressure from 20MPa to 0MPa; after the carrier is locally heated to 155°C, the Mo(CO) will be dissolved 6 The supercritical carbon dioxide mixture enters the pressure relief nucleation and reaction zone with a flow rate of 75sccm and a pulse time of 30s; the pressure relief n...
example 2
[0046] Weigh 50mgMo(CO) 6 For the metal precursor with 10g C 2 h 6 S 2 The non-metallic precursor is placed in two precursor dissolution tanks respectively; the supercritical carbon dioxide with a temperature of 40 ° C and a pressure of 20 MPa is introduced to dissolve; 1 × 1 cm 2 SiO 2 The / Si carrier is placed in the pressure relief nucleation and reaction zone; the dissolved Mo(CO) 6 The supercritical carbon dioxide mixture enters the pressure relief nucleation and reaction zone with a flow rate of 150sccm and a pulse time of 30s; inject supercritical carbon dioxide into the pressure relief nucleation and reaction zone, keep the temperature at 50°C and the pressure at 40MPa for 1.5min; open within 80s Quickly open the bypass to quickly reduce the pressure relief nucleation and reaction zone pressure from 40MPa to 0MPa; after the carrier is locally heated to 175°C, the Mo(CO) will be dissolved 6 The supercritical carbon dioxide mixture enters the pressure relief nucleati...
example 3
[0048] Weigh 60mg tungsten hexacarbonyl (W(CO) 6 ) is the metal precursor placed in the precursor dissolution tank; the temperature is 50 ℃, the pressure is 35MPa supercritical carbon dioxide dissolved; 1 × 1cm 2 al 2 o 3 The carrier is placed in the pressure release nucleation and reaction zone; the dissolved W(CO) 6 The supercritical carbon dioxide mixture enters the pressure relief nucleation and reaction zone with a flow rate of 125sccm and a pulse time of 30s; inject supercritical carbon dioxide into the pressure relief nucleation and reaction zone, keep the temperature at 50°C and the pressure at 60MPa for 1min; open the fast valve within 90s Open the bypass to quickly reduce the pressure relief nucleation and reaction zone pressure from 60MPa to 0MPa; after the carrier is locally heated to 200°C, the dissolved W(CO) 6 The supercritical carbon dioxide mixture enters the pressure relief nucleation and reaction zone with a flow rate of 50sccm and a pulse time of 30s; th...
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