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Metal oxide semiconductor device and method of manufacturing same

A technology of oxide semiconductors and semiconductors, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of CMOS process incompatibility, increase device on-resistance, increase device size, etc., and achieve process compatibility , Reduce the on-resistance, reduce the length of the effect

Active Publication Date: 2021-01-15
SILERGY SEMICON TECH (HANGZHOU) CO LTD
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Problems solved by technology

However, in order to meet the high withstand voltage, the length of the drift region of the LDMOS device is generally set relatively long, which not only increases the on-resistance of the device, but also increases the size of the device
The trench MOS device can reduce the size of the device, but its process is more complicated and incompatible with the CMOS process

Method used

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  • Metal oxide semiconductor device and method of manufacturing same
  • Metal oxide semiconductor device and method of manufacturing same
  • Metal oxide semiconductor device and method of manufacturing same

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Embodiment Construction

[0040] The present invention will be described in more detail below with reference to the accompanying drawings. In the various figures, like elements are designated by like reference numerals. For the sake of clarity, various parts in the figures have not been drawn to scale. Additionally, some well-known parts may not be shown. For the sake of simplicity, the semiconductor structure obtained after several steps can be depicted in one figure.

[0041] It will be understood that, in describing the structure of a device, when a layer or region is referred to as being "on" or "over" another layer or region, it can be directly on the other layer or region, or Other layers or regions are also included between it and another layer, another region. And, if the device is turned over, the layer, one region, will be "under" or "under" another layer, another region.

[0042] In order to describe the situation directly above another layer, another area, the expression "A is directly ...

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Abstract

The invention provides a metal oxide semiconductor device and a manufacturing method thereof. The device comprises a substrate, wherein a source region extends into the substrate from the upper surface of the substrate and has a first doping type; a gate structure is located on the upper surface of the substrate, the gate structure at least exposes the source region, the semiconductor layer is located on the upper surface of the substrate and has a first doping type, the semiconductor layer is used as a partial voltage-withstanding region of the device, the source region is located on the first side of the gate structure, and the source region is located on the second side of the gate structure; the semiconductor layer is located on the second side of the gate structure, and the first sideand the second side of the gate structure are opposite. According to the metal oxide semiconductor device and the manufacturing method thereof, the size of the device is reduced, the manufacturing process is simple, and the metal oxide semiconductor device is compatible with the CMOS process.

Description

technical field [0001] The present invention relates to the technical field of semiconductors, and more particularly, to a metal oxide semiconductor device and a method for manufacturing the metal oxide semiconductor device. Background technique [0002] At present, two mainstream power MOSFETs are LDMOS devices and trench MOS devices. In high-voltage power integrated circuits, high-voltage LDMOS devices are often used to meet the requirements of high voltage resistance and power control. However, in order to meet the high withstand voltage, the drift region length of the LDMOS device is generally set to be relatively long, which not only increases the on-resistance of the device, but also increases the size of the device. The trench MOS device can reduce the size of the device, but its process is complicated and incompatible with the CMOS process. SUMMARY OF THE INVENTION [0003] In view of this, an object of the present invention is to provide a metal oxide semiconduc...

Claims

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Application Information

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IPC IPC(8): H01L29/06H01L29/08H01L29/78H01L21/336
CPCH01L29/7816H01L29/66681H01L29/0611H01L29/0882H01L29/7835H01L29/66659H01L29/1045H01L29/66628H01L29/04H01L29/0847
Inventor 游步东夏春新
Owner SILERGY SEMICON TECH (HANGZHOU) CO LTD
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