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Trench type Schottky diode device

A Schottky diode, trench technology, used in semiconductor devices, thyristors, electrical components, etc., to solve problems such as resistance limitations

Pending Publication Date: 2021-01-26
安徽芯塔电子科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, further reduction in resistance is limited due to the sacrifice of the conductive channel at the bottom of the trench

Method used

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  • Trench type Schottky diode device
  • Trench type Schottky diode device
  • Trench type Schottky diode device

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Embodiment Construction

[0026] The technical solutions of the present invention will be clearly and completely described below in conjunction with the accompanying drawings. Apparently, the described embodiments are some of the embodiments of the present invention, but not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0027] In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer" etc. The indicated orientation or positional relationship is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the referred device or element must have a specific orientation, ...

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Abstract

The invention relates to the technical field of semiconductors, in particular to a groove type Schottky diode device, which is characterized in that an active region of the device is formed by connecting a plurality of primitive cells in parallel, and each basic primitive cell comprises a groove and a p + layer which are orthogonally arranged, i.e., the direction of the groove is vertical to the direction of the p + layer; in one primitive cell, a structure A and a structure B are sequentially arranged in the depth direction perpendicular to the paper surface, the structure A is of a pure groove Schottky diode structure, and the structure B is of a pn diode structure. For an n-type conductive device, p + region and groove orthogonal arrangement is formed in a primitive cell of the device through opposite types of doping, electric field shielding of groove and Schottky contact is achieved, and reverse bias leakage current of the device is reduced. At the same time, through Schottky contact of different barriers in the trench and on the mesa, the turn-on voltage and on resistance of the device are reduced.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a trench Schottky diode device. Background technique [0002] Schottky diodes are multi-sub devices. Because they have no reverse recovery charge, they are used in high-frequency switching circuits and have much lower losses than pn diodes. They are widely used in a wide range of applications. SiC Schottky diodes can realize the application advantages of high temperature resistance, high voltage and high operating frequency due to the wide band gap, high critical electric field and high thermal conductivity of SiC materials. In general, the reverse bias leakage current of Schottky diodes is much larger than that of pn diodes, which is its disadvantage. This is mainly determined by the size of the potential barrier and the electric field strength of the Schottky contact surface. Therefore, in order to reduce the Schottky diode Generally, the method of setting the opposite ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/872H01L29/06
CPCH01L29/872H01L29/0603H01L29/0684H01L29/0615H01L29/0626H01L29/0661
Inventor 倪炜江
Owner 安徽芯塔电子科技有限公司