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Preparation method of silicon carbide powder and silicon carbide powder

A silicon carbide powder, silicon powder technology, applied in chemical instruments and methods, carbon compounds, inorganic chemistry, etc., can solve the problems of limited mixture uniformity, long mixing time, and low mixture density, etc., and achieve high bulk density. , The effect of increasing single output and reducing production cost

Active Publication Date: 2021-01-29
BYD CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the large difference in the characteristics of the two materials, it takes a long time to mix the materials (about 48 hours), and the uniformity of the obtained mixture is limited and the density of the mixture is not high. small output

Method used

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Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0020] The invention provides a kind of preparation method of silicon carbide powder, mainly comprises the following steps:

[0021] S1. Mix silicon powder and graphite powder once, and then carry out vacuum melting and gas atomization treatment to form spherical and / or subspherical powders, wherein the melting temperature is 1500-1600°C;

[0022] S2. Put the powder obtained in step S1 into a graphite crucible, put it into a reaction chamber, and perform a heating synthesis reaction to obtain silicon carbide powder.

[0023] The present invention uses vacuum smelting gas atomization to process the raw materials of silicon powder and graphite powder, so that the raw materials form a solid-liquid mixture after smelting, and the solid-liquid mixture is quickly atomized and solidified, thereby obtaining spherical and / or sub-spherical powders of silicon-wrapped graphite powder , which shortens the mixing time of raw materials; and the bulk density of spherical and / or sub-spherical ...

Embodiment 1

[0038] (1) Weigh 2.55Kg of polysilicon powder (purity 9N, 99.9999999%) and graphite powder (purity 5N, 99.999%) 1.08Kg, put them into a three-dimensional mixer and mix for 1 hour;

[0039] (2) Transfer the powder obtained in step (1) to the smelting device of the production equipment for preparing powder materials by vacuum smelting gas atomization, evacuate, introduce protective atmosphere Ar gas, and heat to 1550 ° C, keep it warm for 10 minutes, and then inert The gas Ar is an aerosolization gas to rapidly atomize the solid-liquid mixture to form solid-liquid droplets, which are solidified into spherical and / or sub-spherical powders in the collection chamber, with a particle size of 120 um;

[0040] (3) Collect the powder prepared in the cabin, and then mix it with a three-dimensional mixer for 5 hours;

[0041] (4) Fill the graphite crucible after mixing, transfer to the reaction chamber, seal the reaction chamber, control the temperature at 900°C, and use a vacuum pump to...

Embodiment 2

[0044] According to the method of Example 1, the difference is that the graphite powder in step (1) is 1.04Kg.

[0045] Silicon carbide powder A2 is α-phase silicon carbide; particle size D50 is 515um; GDMS metal impurity ion content is about 7.8ppm.

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Abstract

The invention relates to a preparation method of silicon carbide powder and the silicon carbide powder. The preparation method comprises the steps of: S1, mixing silicon powder and graphite powder forthe first time, then performing vacuum smelting gas atomization treatment to form spherical and / or sub-spherical powder, and keeping the smelting temperature at 1,500DEG C-1,600DEG C; and S2, puttingthe powder obtained in the S1 into a graphite crucible, putting the graphite crucible into a reaction chamber, and carrying out a heating synthesis reaction to obtain the silicon carbide powder. Through vacuum smelting gas atomization treatment, the mixing uniformity of the raw materials is improved, and the mixing time of the raw materials is shortened; and the graphite powder is coated with themolten silicon through vacuum smelting gas atomization treatment, so that compact spherical and / or sub-spherical powder is formed, more raw materials can be filled in a limited reaction chamber, thesingle-time yield of the silicon carbide powder is increased, and the production cost is reduced.

Description

technical field [0001] The invention relates to the field of silicon carbide preparation, in particular to a method for preparing silicon carbide powder and the silicon carbide powder. Background technique [0002] In the prior art, high-purity polysilicon particles are mixed with high-purity graphite powder, then placed in a graphite crucible, and placed in a reaction chamber for vacuum heating to obtain high-purity silicon carbide powder. [0003] At present, high-purity polysilicon block materials are easy to obtain and have high purity (9N-11N), while high-purity polysilicon pellets are not easy to obtain and have low purity (>6N). Moreover, even for high-purity polysilicon particles, the particles are at the millimeter or submillimeter level, such as 0.05-1mm or 0.5-2.4mm; while the particle size of high-purity graphite powder is between tens of um, and the particle size difference is relatively large. Big. Due to the large difference in the characteristics of the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B32/984
CPCC01B32/984C01P2004/60C01P2006/80
Inventor 周芳享朱一鸣周维
Owner BYD CO LTD
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