53results about How to "High single output" patented technology

The invention discloses a low-temperature preparation method for a CuFeO2 crystal material of a delafossite structure, in particular to a low-temperature hydrothermal synthesis method for rapidly preparing the CuFeO2 nanocrystalline material of the delafossite structure. The method comprises the steps that parameters including reaction precursor components, the reaction temperature and the filling rate of a reaction solution in a hydrothermal reaction kettle are regulated and controlled through a low-temperature hydrothermal reaction, reactants including Cu(NO3)2 and FeCl2 react for 12 hours to 48 hours at the temperature ranging from 100 DEG C to 160 DEG C, and then, after a reaction product is processed through centrifugal cleaning and dried, the nanoscale CuFeO2 crystal material is obtained. The low-temperature preparation method for the CuFeO2 crystal material of the delafossite structure is easy to operate, the technological parameters are easy to control, no pollution is caused, the yield is high, and the method can be widely used for photoelectricity functional devices such as transparent conducting oxide.

The invention discloses a Pt / C catalyst for a fuel cell. The mass fraction of Pt in the Pt / C catalyst is 60%. -200 parts, 200-350 parts of reducing polyol solution of 15-30g / L chloroplatinic acid hexahydrate, 30-100 parts of reducing polyol, 10-40 parts of 1M alkali solution. Compared with the prior art of the same kind, the catalyst prepared by the invention has large electrochemical active area, simple process and high single output.

The invention provides a method for silk-screening monochrome gradient effect patterns. The method includes arranging mesh plates of areas where gradient effect patterns are silk-screened into patternholes that are gradually changed from large to small or from small to large, wherein mesh yarn in the mesh plates are selected from silk screens of 90 T - 120 T; arranging UV light curing adhesive layers including the pattern holes on the double surfaces of the mesh yarn; silk-screening a gradient effect pattern ink layer formed by monochrome on a printed object, the angle of a scraper during silk-screening being 60-70 DEG, the speed of printing being 10-15 times / min, and the thickness of the ink layer of the silk-screening being more than 15 microns; covering the ink layer with underpaintingink after the gradient effect pattern ink layer is fixed, wherein the thickness of the covered underpainting ink layer is more than 3 microns; and obtaining a target product after the underpainting ink layer is fixed. The method can be realized by using existing common silkscreen equipment, so that the method is convenient in operation, simple in printing and plate making, low in cost and strongin adaptability, and can realize monochrome gradient silkscreen effects.

The invention provides a preparation method of a graphene oxide-Brianite composite, comprising the following steps: reacting zinc sulfate heptahydrate and urea in water for the first time, adding graphene oxide dispersion liquid, and reacting again to obtain graphite oxide ene-brianite complex. This application provides a preparation method of graphene oxide-Brianite composite. The preparation raw materials of this preparation method are all non-hazardous chemicals, the preparation process is safer, and the preparation time is short. Generally, it can be completed in 7-8 hours. And the yield of graphene oxide-brianite prepared in one time is high.

The invention discloses a preparation method for a delafossite-structure AgCrO2 nanocrystalline material, in particular to a low-temperature hydro-thermal synthesis method for rapidly preparing a delafossite-structure AgCrO2 nanocrystalline material. The preparation method comprises the following steps: regulating a reaction precursor constituent, a reaction temperature and the filling rate parameter of reaction solution in a hydro-thermal reaction kettle, reacting at 190-230 DEG C for 36-60 hours, carrying out centrifugal cleaning treatment on the reaction product for multiple times, and drying at 60 DEG C in a vacuum drying oven for 24-48 hours, thereby finally obtaining the AgCrO2 nanocrystalline material with the size of 10-20 nm. The method is simple to operate, easy in control over process parameters, pollution-free, high in yield, and capable of being widely used in photoelectric function devices such as transparent conductive oxides.

The invention discloses a p-type delafossite structure CuScO 2 Crystal material and its preparation method and application, the method comprises: step 1, preparation of reaction precursor: with Cu 2+ Source reactants and Sc 3+ The source reactant is used as the raw material, deionized water is used as the reaction liquid, and the reducing agent and mineralizing agent are added and stirred until completely dissolved to prepare the reaction precursor; step 2, the reaction precursor is subjected to hydrothermal treatment at 210-240°C After reacting for 12 to 48 hours, the reaction product was centrifuged to obtain a precipitate, and the precipitate was dried to obtain the p-type delafossite structure CuScO 2 crystal material. The present invention utilizes the single reaction of hydrothermal method to prepare gram-level CuScO 2 Crystal material, no need to adjust the pH value of the precursor reactant; and the present invention explores CuScO for the first time 2 As a catalyst material in electrolytic water oxygen evolution, it shows good electrolytic water oxygen evolution activity and stability under alkaline conditions.

The invention belongs to the technical field of metal purification, and relates to a furnace pipe device and a method for preparing ultra-high purity aluminum. The furnace pipe device is characterized by sequentially comprising a furnace pipe outer frame, a thin-wall seal sleeve and a graphite crucible from outside to inside, wherein a hinge furnace lid is arranged at the upper part of the furnace pipe; a water inlet hole, a water outlet hole, an observation hole, an air exhaust hole, an air inlet hole, an exhaust vent, a temperature measuring hole and a pressure measuring hole are formed in the furnace lid; a rubber seal strip is arranged between the furnace lid and the furnace pipe outer frame; and the furnace lid is connected and fastened with the furnace pipe through buckles and bolts. The furnace pipe device disclosed by the invention is capable of melting aluminum one time; the crystal is 65Kg; the height of a crystal aluminum ingot can reach 90cm; the single production can be increased by 2.5 times in comparison with that of a conventional high-purity aluminum production technology; an argon protection environment is only kept in the furnace pipe; the furnace pipe device has no environmental requirements on heating and electromagnetic stirring devices, and is strong in continuous working ability; compared with a conventional production technology, the furnace pipe device and the method have the advantages that the power consumption is reduced by 2 / 3; and the energy consumption cost is saved by 3 / 5.