Method for preparing ZnTe doped p-type polycrystalline Bi2Te3 thermoelectric material

A thermoelectric material, p-type technology, used in the growth of polycrystalline materials, the junction lead-out material of thermoelectric devices, the manufacture/processing of thermoelectric devices, etc. , difficult to wait

Active Publication Date: 2020-10-30
WUHAN UNIV OF TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, at present, researchers mainly focus on the further improvement of its thermoelectric properties. Most studies use high-speed melt spinning to obtain richer nanostructures to reduce the thermal conductivity of materials. This method significantly reduces the thermal conductivity of materials while improving their thermoelectric properties. The repeatability of preparation and the number of samples obtained in a single preparation make it difficult to apply this process in actual production [1]-[3]

Method used

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  • Method for preparing ZnTe doped p-type polycrystalline Bi2Te3 thermoelectric material
  • Method for preparing ZnTe doped p-type polycrystalline Bi2Te3 thermoelectric material
  • Method for preparing ZnTe doped p-type polycrystalline Bi2Te3 thermoelectric material

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Effect test

Embodiment 1

[0030] A preparation of ZnTe-doped p-type polycrystalline Bi 2 Te 3 The method of thermoelectric material, concrete steps are as follows:

[0031] (1) Using high-purity Bi, Sb, Te, Zn as initial raw materials, according to Zn 0.015 Bi 0.46 Sb 1.54 Te 3.015 The stoichiometric ratio of each element is weighed and vacuum-sealed in a quartz tube, the quartz tube is placed in a melting furnace, melted at 1123K for 10 hours, and cooled with the furnace to obtain an ingot;

[0032] (2) The ingot body that step (1) is obtained is carried out melt spinning, and protective atmosphere is argon gas, and copper stick rotating speed is 8m / s, and injection aperture is 0.35mm;

[0033] (3) Collect the thin strip obtained in step (2), then vacuum-seal it in a quartz tube, put it into the sample for annealing after the temperature of the annealing furnace reaches 423K, and the annealing time is 20min;

[0034](4) Grinding the annealed thin strip through a 200-mesh sieve and then performin...

Embodiment 2

[0041] A preparation of ZnTe-doped p-type polycrystalline Bi 2 Te 3 The method of thermoelectric material, concrete steps are as follows:

[0042] (1) Using high-purity Bi, Sb, Te, Zn as initial raw materials, according to Zn 0.015 Bi 0.46 Sb 1.54 Te 3.015 The stoichiometric ratio of each element is weighed and vacuum-sealed in a quartz tube, the quartz tube is placed in a melting furnace, melted at 1123K for 10 hours, and cooled with the furnace to obtain an ingot;

[0043] (2) The ingot body that step (1) is obtained is carried out melt spinning, and protective atmosphere is argon, and copper stick rotating speed is 4m / s, and injection aperture is 0.35mm;

[0044] (3) Collect the thin strips obtained in step (2), and then vacuum-seal them in a quartz tube. When the temperature of the annealing furnace reaches 423K, put the sample into the sample for annealing, and the annealing time is 20 minutes;

[0045] (4) Grinding the annealed thin strip through a 200-mesh sieve ...

Embodiment 3

[0052] A preparation of ZnTe-doped p-type polycrystalline Bi 2 Te 3 The method of thermoelectric material, concrete steps are as follows:

[0053] (1) Using high-purity Bi, Sb, Te, Zn as initial raw materials according to Zn 0.015 Bi 0.46 Sb 1.54 Te 3.015 The stoichiometric ratio of each element is weighed and vacuum-sealed in a quartz tube, the quartz tube is placed in a melting furnace, melted at 1123K for 10 hours, and cooled with the furnace to obtain an ingot;

[0054] (2) The ingot body obtained in step (1) is subjected to melt spinning, the protective atmosphere is argon, the rotational speed of the copper rod is 4 m / s, and the injection diameter is 0.35 mm.

[0055] (3) Collect the thin strips obtained in step (2), and then vacuum-seal them in a quartz tube. When the temperature of the annealing furnace reaches 523K, put the sample into it for annealing, and the annealing time is 20min.

[0056] (4) Grinding the annealed thin strip through a 200-mesh sieve and t...

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Abstract

The invention discloses a method for preparing a ZnTe-doped p-type polycrystalline Bi2Te3 thermoelectric material, which comprises the following steps of: (1) weighing high-purity elementary substances Bi, Sb, Te and Zn as raw materials according to the stoichiometric ratio of each element in the chemical composition of the ZnTe-doped p-type polycrystalline Bi2Te3 thermoelectric material; (2) sealing the raw materials weighed in the step (1) in vacuum, melting, and cooling to obtain an ingot body; (3) carrying out melt spinning on the ingot body obtained in the step (2) in a protective atmosphere, collecting the obtained thin strip, carrying out vacuum sealing, and annealing; and (4) grinding the thin strip obtained by annealing in the step (3), and performing spark plasma activated sintering to obtain the ZnTe doped high-performance p-type polycrystalline Bi2Te3 thermoelectric material. The method is high in repeatability, and the prepared p-type polycrystalline Bi2Te3 thermoelectricmaterial is excellent in thermoelectric performance and good in stability.

Description

technical field [0001] The invention belongs to the technical field of energy materials and provides a method for preparing ZnTe-doped p-type polycrystalline Bi 2 Te 3 methods for thermoelectric materials. Background technique [0002] With the aggravation of energy crisis and environmental pollution, people's requirements for the development and utilization of new energy are increasing day by day. Thermoelectric devices can recollect and convert a large amount of wasted heat energy into electrical energy for human use, which has attracted the attention of more and more researchers. The conversion efficiency of a thermoelectric device mainly depends on the thermoelectric performance of the material, which is often measured by the dimensionless thermoelectric figure of merit ZT, ZT=S 2 σT / κ, where S is the Seebeck coefficient, σ is the electrical conductivity, κ is the total thermal conductivity, and T is the absolute temperature. Therefore, in order to obtain a higher ZT...

Claims

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Application Information

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IPC IPC(8): H01L35/16H01L35/18H01L35/34C30B29/46C30B28/02
CPCC30B29/46C30B28/02H10N10/853H10N10/852H10N10/01
Inventor 唐新峰张政楷苏贤礼曹宇
Owner WUHAN UNIV OF TECH
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