Method for preparing ZnTe doped p-type polycrystalline Bi2Te3 thermoelectric material

A thermoelectric material, p-type technology, used in the growth of polycrystalline materials, the junction lead-out material of thermoelectric devices, the manufacture/processing of thermoelectric devices, etc. , difficult to wait

Active Publication Date: 2020-10-30
WUHAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, at present, researchers mainly focus on the further improvement of its thermoelectric properties. Most studies use high-speed melt spinning to obtain richer nanostructures to reduce the thermal conductivity of materials. This method significantly

Method used

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  • Method for preparing ZnTe doped p-type polycrystalline Bi2Te3 thermoelectric material
  • Method for preparing ZnTe doped p-type polycrystalline Bi2Te3 thermoelectric material
  • Method for preparing ZnTe doped p-type polycrystalline Bi2Te3 thermoelectric material

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Experimental program
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Effect test

Embodiment 1

[0030] A preparation of ZnTe-doped p-type polycrystalline Bi 2 Te 3 The method of thermoelectric material, concrete steps are as follows:

[0031] (1) Using high-purity Bi, Sb, Te, Zn as initial raw materials, according to Zn 0.015 Bi 0.46 Sb 1.54 Te 3.015 The stoichiometric ratio of each element is weighed and vacuum-sealed in a quartz tube, the quartz tube is placed in a melting furnace, melted at 1123K for 10 hours, and cooled with the furnace to obtain an ingot;

[0032] (2) The ingot body that step (1) is obtained is carried out melt spinning, and protective atmosphere is argon gas, and copper stick rotating speed is 8m / s, and injection aperture is 0.35mm;

[0033] (3) Collect the thin strip obtained in step (2), then vacuum-seal it in a quartz tube, put it into the sample for annealing after the temperature of the annealing furnace reaches 423K, and the annealing time is 20min;

[0034](4) Grinding the annealed thin strip through a 200-mesh sieve and then performin...

Embodiment 2

[0041] A preparation of ZnTe-doped p-type polycrystalline Bi 2 Te 3 The method of thermoelectric material, concrete steps are as follows:

[0042] (1) Using high-purity Bi, Sb, Te, Zn as initial raw materials, according to Zn 0.015 Bi 0.46 Sb 1.54 Te 3.015 The stoichiometric ratio of each element is weighed and vacuum-sealed in a quartz tube, the quartz tube is placed in a melting furnace, melted at 1123K for 10 hours, and cooled with the furnace to obtain an ingot;

[0043] (2) The ingot body that step (1) is obtained is carried out melt spinning, and protective atmosphere is argon, and copper stick rotating speed is 4m / s, and injection aperture is 0.35mm;

[0044] (3) Collect the thin strips obtained in step (2), and then vacuum-seal them in a quartz tube. When the temperature of the annealing furnace reaches 423K, put the sample into the sample for annealing, and the annealing time is 20 minutes;

[0045] (4) Grinding the annealed thin strip through a 200-mesh sieve ...

Embodiment 3

[0052] A preparation of ZnTe-doped p-type polycrystalline Bi 2 Te 3 The method of thermoelectric material, concrete steps are as follows:

[0053] (1) Using high-purity Bi, Sb, Te, Zn as initial raw materials according to Zn 0.015 Bi 0.46 Sb 1.54 Te 3.015 The stoichiometric ratio of each element is weighed and vacuum-sealed in a quartz tube, the quartz tube is placed in a melting furnace, melted at 1123K for 10 hours, and cooled with the furnace to obtain an ingot;

[0054] (2) The ingot body obtained in step (1) is subjected to melt spinning, the protective atmosphere is argon, the rotational speed of the copper rod is 4 m / s, and the injection diameter is 0.35 mm.

[0055] (3) Collect the thin strips obtained in step (2), and then vacuum-seal them in a quartz tube. When the temperature of the annealing furnace reaches 523K, put the sample into it for annealing, and the annealing time is 20min.

[0056] (4) Grinding the annealed thin strip through a 200-mesh sieve and t...

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Abstract

The invention discloses a method for preparing a ZnTe-doped p-type polycrystalline Bi2Te3 thermoelectric material, which comprises the following steps of: (1) weighing high-purity elementary substances Bi, Sb, Te and Zn as raw materials according to the stoichiometric ratio of each element in the chemical composition of the ZnTe-doped p-type polycrystalline Bi2Te3 thermoelectric material; (2) sealing the raw materials weighed in the step (1) in vacuum, melting, and cooling to obtain an ingot body; (3) carrying out melt spinning on the ingot body obtained in the step (2) in a protective atmosphere, collecting the obtained thin strip, carrying out vacuum sealing, and annealing; and (4) grinding the thin strip obtained by annealing in the step (3), and performing spark plasma activated sintering to obtain the ZnTe doped high-performance p-type polycrystalline Bi2Te3 thermoelectric material. The method is high in repeatability, and the prepared p-type polycrystalline Bi2Te3 thermoelectricmaterial is excellent in thermoelectric performance and good in stability.

Description

technical field [0001] The invention belongs to the technical field of energy materials and provides a method for preparing ZnTe-doped p-type polycrystalline Bi 2 Te 3 methods for thermoelectric materials. Background technique [0002] With the aggravation of energy crisis and environmental pollution, people's requirements for the development and utilization of new energy are increasing day by day. Thermoelectric devices can recollect and convert a large amount of wasted heat energy into electrical energy for human use, which has attracted the attention of more and more researchers. The conversion efficiency of a thermoelectric device mainly depends on the thermoelectric performance of the material, which is often measured by the dimensionless thermoelectric figure of merit ZT, ZT=S 2 σT / κ, where S is the Seebeck coefficient, σ is the electrical conductivity, κ is the total thermal conductivity, and T is the absolute temperature. Therefore, in order to obtain a higher ZT...

Claims

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Application Information

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IPC IPC(8): H01L35/16H01L35/18H01L35/34C30B29/46C30B28/02
CPCC30B29/46C30B28/02H10N10/853H10N10/852H10N10/01
Inventor 唐新峰张政楷苏贤礼曹宇
Owner WUHAN UNIV OF TECH
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