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An MRAM system with ECC function and method of operating same

An operation method and functional technology, which is applied in the field of MRAM system with ECC function, can solve the problems of point change on the detected point, different circuit voltage division, complex implementation, etc., achieve simple method, improve reliability, and reduce writing work consumption effect

Active Publication Date: 2021-01-29
SHANGHAI CIYU INFORMATION TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The resistance of the unit to be written is different, which will inevitably lead to different voltage division of the circuit, resulting in the change of the point on the detected point
The implementation of the above patents is too complicated and has loopholes

Method used

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  • An MRAM system with ECC function and method of operating same
  • An MRAM system with ECC function and method of operating same
  • An MRAM system with ECC function and method of operating same

Examples

Experimental program
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Effect test

Embodiment 1

[0033] An embodiment of the present invention provides an MRAM system with an ECC function, including an MRAM, an ECC circuit, and a register set, the register set is arranged between the MRAM and the ECC circuit, and is connected to the MRAM and the ECC circuit electrical connection,

[0034] The register group is used to read data from the MRAM and store the read data into the register group;

[0035] The ECC circuit is used to read data from the MRAM at the same time as the register group; when the MRAM writes back data, it is used to compare the written back data with the data stored in the register group, and correct data errors Check and correct.

[0036] The ECC circuit realizes checking and correcting data errors by encoding a word of data and adding parity bits.

[0037] When the data written back is the same as the data stored in the register set, there is no need to write the data back to the MRAM; when the data written back is different from the data stored in th...

Embodiment 2

[0040] On the basis of above-mentioned embodiment 1, the present invention also provides a kind of operation method of the MRAM system with ECC function, comprises the following steps:

[0041] Step 1: a register set, reading data from the MRAM, and storing the read data into the register set;

[0042] Step 2: The ECC circuit is used to read data from the MRAM at the same time as the register group, and when the MRAM writes back data, compares the written-back data with the data stored in the register group, and checks and sums data errors correction.

[0043] The ECC circuit in the step 2 realizes checking and correcting data errors by encoding a word of data and adding parity bits.

[0044] In the step 2, when the write-back data is the same as the data stored in the register set, there is no need to write the data back into the MRAM;

[0045] In the step 2, when the data written back is different from the data stored in the register set, the data needs to be written back in...

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Abstract

The MRAM system with the ECC function comprises an MRAM, an ECC circuit and a register set; the register set is arranged between the MRAM and the ECC circuit and electrically connected with the MRAM and the ECC circuit; and the register set is used for reading data from the MRAM and storing the read data into the register set; the ECC circuit is used for reading data from the MRAM together with the register set; and when the MRAM writes back the data, the MRAM is used for comparing the written-back data with the data stored in the register set and checking and correcting data errors. Accordingto the invention, the state of the written bit can be detected while the writing operation is carried out, the reliability of the MRAM is high, the writing power consumption is reduced, and the chipspeed and the design complexity are not influenced.

Description

technical field [0001] The invention relates to the technical field of MRAM, in particular to an MRAM system with ECC function and an operation method thereof. Background technique [0002] MRAM is a new memory and storage technology that can be read and written as fast as SRAM / DRAM, and can permanently retain data after power failure like Flash memory. Unlike DRAM and Flash, which are incompatible with standard CMOS semiconductor processes, MRAM can be integrated into a chip with logic circuits. MRAM with magnetic tunnel junction is considered to be the future solid-state non-volatile memory, which has the characteristics of high-speed reading and writing, large capacity and low energy consumption. [0003] The principle of MRAM is based on the structure of magnetic tunnel junction (MTJ). It consists of two layers of ferromagnetic material sandwiching a very thin layer of non-ferromagnetic insulating material, such as figure 1 and figure 2 shown. The lower layer of fe...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C11/16G11C29/42
CPCG11C11/1675G11C11/1677G11C29/42
Inventor 戴瑾夏文斌
Owner SHANGHAI CIYU INFORMATION TECH CO LTD
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