Method for stripping ferroelectric single crystal thin film

Abstract

The invention relates to a method for stripping a ferroelectric single crystal thin film. The method comprises the steps of forming a thickness-controllable Li-ion-poor second-phase single crystal layer on the surface of a ferroelectric single crystal material by using a proton exchange method; stripping the second-phase single crystal layer subjected to proton exchange on the surface of the ferroelectric single crystal material by adopting an ion implantation method to obtain a thin film layer; and supplementing Li ions missing in the thin film layer by using an antiproton exchange method, and reducing the thin film layer to the crystal structure and the chemical ratio of the original ferroelectric single crystal material. Compared with the prior art, the proton exchange method and the ion beam stripping technology are combined, the difficulty of manufacturing the large-area ferroelectric single crystal thin film through ion beam stripping is reduced, the ferroelectric single crystalthin film can be more effectively and rapidly stripped through the ion beam, the method can be applied to the fields of ferroelectric memories, ferroelectric transistor manufacturing and the like, themanufacturing cost of the ferroelectric storage material is reduced, and the manufacturing efficiency is improved.

Description

technical field [0001] The invention relates to the technical field of single crystal thin films, in particular to a method for peeling off ferroelectric single crystal thin films. Background technique [0002] With the rapid development of information technology, the processing capacity of information is continuously enhanced, the amount of data is increasing rapidly, new technologies such as cloud computing, cloud storage, and the Internet of Things are emerging in an endless stream, and the requirements for memory and transistor performance are constantly increasing, especially in low energy consumption, high Capacity, long-term data retention, etc. [0003] Ferroelectric single crystal materials, such as lithium niobate and lithium carbonate single crystal materials, have been widely used in the fields of surface acoustic wave devices, photoelectric modulators, piezoelectric sensors and ferroelectric memories because of their unique optical properties and ferroelectricit...

AI Technical Summary

Problems solved by technology

However, in actual operation, such an ion implantation stripping method will be difficult to strip, and the uneven stress distribution in the crystal garden will cause the crystal garden to crack during the ion implantation process, which will take a long time (3-12h), and the cost will be high.

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