Ultraviolet light-emitting diode epitaxial wafer and manufacturing method thereof

Abstract

The invention provides an ultraviolet light-emitting diode epitaxial wafer and a manufacturing method thereof, and belongs to the technical field of semiconductors. The ultraviolet light-emitting diode epitaxial wafer comprises a substrate, and a buffer layer, an undoped AlGaN layer, an N-type layer, an active layer and a P-type layer which are stacked on the substrate in sequence, and further comprises a stress release layer arranged between the N-type layer and the active layer, the stress release layer comprises a first sub-layer, a second sub-layer and a third sub-layer which are sequentially stacked, the first sub-layer is a low-temperature InGaN sub-layer, the second sub-layer is a variable-temperature AlInGaN layer, and the third sub-layer is a high-temperature AlGaN layer. The ultraviolet light-emitting diode epitaxial wafer can optimize the opening size of the V-shaped pit, improve the internal quantum light-emitting efficiency of the LED and improve the crystal quality of theepitaxial wafer.

Description

technical field [0001] The disclosure relates to the technical field of semiconductors, in particular to an epitaxial wafer of an ultraviolet light emitting diode and a manufacturing method thereof. Background technique [0002] Short-wavelength ultraviolet light-emitting diodes based on AlGaN materials have a wide range of applications and are an important research content in the field of nitride semiconductor research. [0003] Epitaxial wafers are an important component in the manufacture of light-emitting diodes. The existing ultraviolet light-emitting diode epitaxial wafer includes a substrate, a buffer layer, an undoped AlGaN layer, an N-type layer, an active layer and a P-type layer stacked on the substrate in sequence. Among them, an InGaN stress release layer is usually grown between the N-type layer and the active layer to release the underlying stress and reduce the generation of dislocations. [0004] The stress release layer in the prior art is usually grown u...

AI Technical Summary

Problems solved by technology

When the opening of the V-shaped pit is too large, the barrier height of the inclined surface of the V-shaped pit is reduced, and the ability to confine the carriers is weakened, which will lead to non-radiative recombination between electrons and holes, which will reduce the internal quantum luminous efficiency of the LED.

At the same time, under low temperature conditions, the density of the formed V-shaped pits will gradually increase, resulting in a decrease in the crystal quality of the epitaxial layer.

Images