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Method of manufacturing glass device and glass device

A manufacturing method and glass technology, applied in manufacturing tools, semiconductor/solid-state device manufacturing, laser welding equipment, etc., can solve the problems of increased substrate cost and high price of silicon substrates

Pending Publication Date: 2021-02-05
TOPPAN PRINTING CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Here, not only the price of silicon substrate is high, but also silicon is a semiconductor
Therefore, in TSV technology, it is necessary to perform insulation treatment after forming a through hole on the silicon substrate, and there is a problem that the cost of the substrate increases.

Method used

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  • Method of manufacturing glass device and glass device
  • Method of manufacturing glass device and glass device
  • Method of manufacturing glass device and glass device

Examples

Experimental program
Comparison scheme
Effect test

no. 1 Embodiment approach

[0035] For the manufacturing method of the glass apparatus according to the first embodiment, using figure 1 to explain.

[0036] (step 1)

[0037] First, if figure 1 As shown in (a), the glass substrate 10 is irradiated with laser light from the side of the first surface 10 a to form the laser modified portion 20 as the starting point of the through hole 40 . The laser reforming portion 20 is formed to extend downward (for example, in the vertical direction) from the first surface 10 a and to stay in the glass substrate 10 at its lower end.

[0038] (step 2)

[0039] Next, if figure 1 As shown in (b), the hydrofluoric acid-resistant metal film 11 is formed on the first surface 10 a of the glass substrate 10 so as to have a thickness in the range of not less than 10 nm and not more than 500 nm. Subsequently, a copper layer 111 is formed on the hydrofluoric acid-resistant metal film 11 so as to have a thickness in the range of not less than 100 nm and not more than 500 nm....

no. 2 Embodiment approach

[0058] For the method of manufacturing a glass device according to the second embodiment, using figure 2 to explain.

[0059] (step 1)

[0060] First, if figure 2 Shown in (a), on the first face 10a of glass substrate 10, form hydrofluoric acid resistant metal film 11 in the mode in the range of not less than 10nm below 500nm with thickness, on hydrofluoric acid resistant metal film 11, form with thickness at 100nm The copper layer 111 is formed within the range of 500 nm or less, thereby forming the seed layer 112 . The material of the hydrofluoric acid-resistant metal film 11 is suitably selected from, for example, chromium, nickel, and nichrome.

[0061] (step 2)

[0062] Next, if figure 2 As shown in (b), the photoresist of the preset pattern is formed on the 1st surface 10a of the glass substrate 10. As shown in FIG. Usually, a dry photoresist is used, but in this step, a direct imaging type photosensitive film such as RD-1225 manufactured by Hitachi Chemical Co....

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Abstract

The present invention addresses the problem of making it possible to more simply provide a glass device comprising a thin glass substrate with a glass thickness of less than or equal to 300 [MU]m. This method of manufacturing a glass device comprises forming one or more through-holes (40) in a glass substrate (10), and making electrical connection through the through-holes (40) between a first wire (14) on a first surface side of the glass substrate and a second wire (15) on a second surface side thereof. After the first wire (14) has been formed, etching is performed to form the through-holes(40) and to decrease the thickness of the glass substrate (10). Thereafter, a wire into the through-holes (40) and the second wire (15) are formed. The thickness of the glass substrate (10) after thedecrease in thickness is 50 [mu]m to 300 [mu]m inclusive, and the through-holes (40) have a truncated-cone shape.

Description

technical field [0001] This invention relates to the manufacturing method of the glass device which has the glass substrate which used the through-hole, and a glass device. Background technique [0002] Conventionally, for example, a packaging technology using a through-silicon via (TSV: Through Silicon Via) is known as an LSI (Large-Scale Integration, large-scale integration) packaging technology. A silicon substrate having through-electrodes is widely used, for example, as an interposer. An interposer is a board on which boards having different distances between terminals (for example, ICs (Integrated Circuits) and printed boards having different wiring design rules) are joined to each other. [0003] As described in Non-Patent Document 1, when forming TSVs on a silicon substrate, there is known a method of forming TSVs before, after, or during a step of forming elements such as transistors and circuits such as electrodes. [0004] Here, not only is the silicon substrate...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/15B23K26/53C03C15/00H01L23/32
CPCC03C15/00H01L23/15C03C23/0025H01L23/49816H01L23/49827H01L21/486H01L21/6835H01L2221/68345H01L2221/68327H01L21/4857H01L23/49822
Inventor 泽田石将士
Owner TOPPAN PRINTING CO LTD