High-efficiency and low-cost sulfate system electrodeposition process for preparing 4N indium

Abstract

The invention discloses a high-efficiency and low-cost sulfate system electrodeposition process for preparing 4N indium. A bottom plate is included, an electrolyte blending component is fixedly mounted at the top of the bottom plate, a lifting device is arranged at the right side of the electrolyte blending component, and a power supply is fixedly mounted on the surface of the lifting device. A clamping assembly is arranged at the bottom of the lifting device, and a negative plate and a positive plate are arranged on the surface of the clamping assembly. The high-efficiency and low-cost sulfate system electrodeposition process for 4N indium has the advantages of high deposition current density, high deposition efficiency, short preparation period, cyclic utilization of electrolyte, low cost, environmental friendliness, easiness in industrialization and the like, can be effectively applied to preparation of 4N (99.99%) refined indium through sulfate system electrodeposition, and can provide raw materials for preparing and application of 5N, 6N and 7N high-purity indium. The positive plate and the negative plate can be conveniently taken down after preparation is completed through the arranged lifting device and clamping assembly.

Description

technical field [0001] The invention relates to the technical field of electrochemical purification and refining of scattered metal indium, in particular to a high-efficiency and low-cost sulfate system electrodeposition process for preparing 4N indium. Background technique [0002] Scattered metal indium is a valuable strategic resource, and its most important use is as a coating (ITO) for semiconductors, electronic devices, and transparent conductive glass. The production of these devices requires high-purity metal indium, otherwise, the impurities in it It will directly affect the performance of the device. For example, in electronic devices, the impurity content of products is required to be no more than 10 μg / g, and in semiconductor devices, the impurity content is required to be less than 0.1 μg / g. In order to obtain higher purity indium, the current separation and purification methods of indium include sulfurization method, extraction method, molten salt refining, vac...

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Problems solved by technology

[0004] The purpose of the present invention is to provide a high-efficiency, low-cost sulfate system electrodeposition process for preparing 4N indium, which has the advantages of high efficiency and low cost, and solves the current widely used electrodeposition process for preparing 4N refined indium. When refining and other methods are combined, there are problems such as complicated process, difficult to deal with toxic exhaust gas, and difficult to scale up

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