Power semiconductor device with temperature and voltage detection function and manufacturing method thereof

Abstract

The invention provides a power semiconductor device with a temperature and voltage detection function and a manufacturing method thereof. The device comprises a power VDMOS device, a detection VDMOS device and a detection diode which are integrated on a same substrate, wherein the power VDMOS device is connected with the grid electrode and the drain electrode of the detection VDMOS device, the source electrode of the detection VDMOS device is connected with the positive electrode of the detection diode, and the negative electrode of the detection diode is connected with the source electrode ofthe power VDMOS device and is grounded. According to the invention, only one or more detection diodes need to be integrated in the VDMOS, and the voltages at the two ends of the detection diode are acquired in a time division multiplexing mode through the on and off states of the VDMOS, so that the temperature, voltage and current of the power VDMOS device are monitored at the same time, the device hardly has extra power consumption, and an extra external detection circuit or device is not needed; the area of a system PCB and the power consumption of the system can be greatly reduced, and thesystem integration degree is improved.

Description

technical field [0001] The invention relates to a power semiconductor device structure and a manufacturing method thereof, in particular to a power semiconductor device with temperature and voltage detection functions and a manufacturing method thereof. Background technique [0002] VDMOS (Vertical Double Diffused Metal Oxide Semiconductor Field Effect Transistor) device is one of the mainstream devices of power semiconductors, and has been widely used in various power systems. Compared with bipolar transistors, it has fast switching speed, low loss, high input impedance, low driving power, and good frequency characteristics. [0003] In the application process of VDMOS, it is often necessary to monitor the current, voltage and temperature flowing through VDMOS. Since the on-resistance of VDMOS is very low, it is difficult to realize the control of current, voltage and temperature under the condition of ensuring device power consumption and measurement accuracy. effective m...

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Problems solved by technology

[0005] In view of the above-mentioned shortcomings of the prior art, the object of the present invention is to provide a power semiconductor device with temperature and voltage detection function and its manufacturing method, which is used to solve the problem in the prior art that it is difficult to control power consumption while ensuring low power consumption. The problem of effective monitoring of VDMOS current, voltage and temperature

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