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Method for preparing OLED anode through nanoimprint lithography

A nano-imprinting and anode technology, which is applied in the direction of photomechanical equipment, pattern surface photolithography, semiconductor/solid-state device manufacturing, etc., can solve problems such as poor resolution and increased processing costs, and achieve the resolution of diffraction phenomena and Scattering phenomenon, reduction of preparation cost, effect of simple process

Active Publication Date: 2021-02-09
浙江宏禧科技有限公司
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  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The technical problem to be solved by the present invention is: the preparation method of the traditional OLED anode requires multiple photolithography exposures, which causes diffraction and scattering phenomena in the optical exposure, which will lead to poor resolution, and lead to simple pattern repeating structures in large-area and batch production. The problem of increasing processing costs

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  • Method for preparing OLED anode through nanoimprint lithography
  • Method for preparing OLED anode through nanoimprint lithography
  • Method for preparing OLED anode through nanoimprint lithography

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Embodiment Construction

[0035] The specific implementation manners of the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. The following examples are used to illustrate the present invention, but are not intended to limit the scope of the present invention.

[0036] Such as Figures 1 to 7 As shown, a method for preparing OLED anodes by nanoimprinting comprises the following steps:

[0037] Step 1, using an etching method to prepare a quartz template 3 with a plurality of grooves 1, a quartz template 2 4 with a plurality of grooves 2, the groove 1 corresponds to the position of the groove 2, and the adjacent groove 1 The distance between them is 0.8 microns, and the width of groove two is greater than the width of groove one;

[0038] Step 2, cleaning the silicon substrate 1 with the driving circuit, cleaning the silicon substrate 1 with acetone and deionized water, blowing dry with a nitrogen gun, and removing residual water...

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Abstract

The invention discloses a method for preparing an OLED anode through nanoimprint lithography. Anode pixel points are prepared through the steps of silicon substrate cleaning, nanoimprint lithography and transfer printing, anode layer preparation, stripping and the like, and nanoimprint lithography can directly and mechanically form a nanograph on ultraviolet curing glue on the premise that electrons and photons are not used, therefore, a diffraction phenomenon and a scattering phenomenon in optical exposure are solved, and a high-resolution micro OLED display can be prepared on a large-area size. The quartz template adopted for imprinting can be repeatedly used, an accurate pattern is obtained with low cost and a simple process, the preparation cost of the OLED anode can be reduced, and the yield is improved.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a method for preparing OLED anodes by nanoimprinting. Background technique [0002] The rapid development of micro-nano technology has widely and deeply entered various industries, such as the micro-display industry. OLED is recognized by the industry as the display technology with the most development potential at present due to its advantages of small thickness, lighter weight, better shock resistance, simple manufacturing process, lower cost, and higher luminous efficiency. OLED displays with a size of less than 1 inch are usually used in head-mounted or palm-mounted computer monitors, AR / VR glasses, real-life games, etc., and are widely used. [0003] The anode manufacturing technology of silicon-based OLED microdisplays includes traditional lift-off methods, dry etching, wet etching methods, etc. These methods need to be exposed to traditional photolithography technology m...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/52H01L51/56G03F7/00
CPCG03F7/0002H10K50/81H10K71/00
Inventor 孙扬吴康敬杨震元李德权颜艳霜
Owner 浙江宏禧科技有限公司