Light emitting diode epitaxial wafer and preparation method thereof

Abstract

The invention provides a light emitting diode epitaxial wafer and a preparation method thereof, which belong to the technical field of light emitting diodes. In the barrier layer of the multi-quantumwell layer, the first InGaN sub-layer can achieve good transition with the InGaN well layer, the growth basis of the barrier layer on the InGaN well layer is guaranteed, the first InN sub-layer servesas a transition layer, good transition and growth from the first InGaN sub-layer to the SiN sub-layer are achieved, and the crystal quality of the SiN sub-layer is improved. And the SiN sub-layer canplay a role in blocking dislocation extension, so that dislocation is prevented from extending upwards, and the crystal quality of the epitaxial structure grown on the SiN sub-layer is further improved. And the finally grown non-doped GaN sub-layer plays a role of a conventional GaN barrier layer, thereby ensuring that the multi-quantum well layer can emit light normally. The crystal quality of the multi-quantum well layer can be greatly improved, and the luminous efficiency of the finally obtained light emitting diode is also improved.

Description

technical field [0001] The present disclosure relates to the technical field of light emitting diodes, in particular to a light emitting diode epitaxial wafer and a preparation method thereof. Background technique [0002] Light-emitting diodes are widely used light-emitting devices, often used in traffic lights, car interior and exterior lights, urban lighting and landscape lighting, etc., and light-emitting diode epitaxial wafers are the basic structure used to prepare light-emitting diodes. A light-emitting diode epitaxial wafer usually includes a substrate and an n-type GaN layer, a multi-quantum well layer and a p-type GaN layer stacked sequentially on the substrate. [0003] In the related art, the multi-quantum well layer usually includes alternately stacked InGaN well layers and GaN barrier layers. However, there is a large lattice mismatch and piezoelectric polarization effect between the InGaN well layer and the GaN barrier layer, resulting in more defects and lea...

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Problems solved by technology

However, there is a large lattice mismatch and piezoelectric polarization effect between the InGaN well layer and the GaN barrier layer, resulting in more defects and leakage channels in the multi-quantum well layer, resulting in the final light-emitting diode epitaxial wafer low luminous efficiency

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