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Nonvolatile resistive random access memory with adjustable write-in voltage and preparation method thereof

A resistive variable memory, non-volatile technology, applied in the direction of electrical components, etc., can solve the problems that are difficult to meet the requirements of ultra-low power consumption, multi-functional intelligent storage, adjustment of memory write voltage, complex preparation process, etc., to achieve Ease of processing, high controllability, and uniform hole size

Active Publication Date: 2021-02-19
NANJING UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But so far, the writing voltage of Flash-type resistive variable memory is mostly high. The writing voltage is limited by its material and structure, and can only be a fixed value, and the writing voltage of the memory cannot be adjusted according to the target demand.
Therefore, the existing non-volatile memory is difficult to meet the requirements of ultra-low power consumption and multi-functional intelligent storage in the field of information storage in the future, which limits its development in industrial applications.
[0004] The application number is 201510271467.4, and the title of the invention is "low formation voltage resistive memory and its preparation method". Although the memory in this patent has the function of writing resistance with low power consumption, the preparation process is complicated, the preparation cost is high, and it cannot Accurate control of write voltage

Method used

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  • Nonvolatile resistive random access memory with adjustable write-in voltage and preparation method thereof
  • Nonvolatile resistive random access memory with adjustable write-in voltage and preparation method thereof
  • Nonvolatile resistive random access memory with adjustable write-in voltage and preparation method thereof

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Embodiment 1

[0037]Such asfigure 1 As shown, a structure of a nonvolatile resistive random access memory with adjustable write voltage is a sandwich structure, which in turn includes a substrate, a bottom electrode, a resistive random access layer, and a top electrode.

[0038]A preparation method of a non-volatile resistive random access memory with adjustable writing voltage is carried out according to the following steps:

[0039]1) Cleaning treatment of Glass / ITO (substrate / bottom electrode): Put it in deionized water, ethanol, acetone, and deionized water in sequence, ultrasonically for 15 minutes, and blow dry with high-purity nitrogen; finally put the substrate in oxygen Treated in a plasma cleaner for 5 minutes.

[0040]2) Preparation of polymer mixed solution: Dissolve polymethyl methacrylate and polystyrene in tetrahydrofuran respectively to form a 5 mg / mL solution. Prepare a 10mL sample bottle, put in the magnet, add 3.5mL polymethyl methacrylate solution with a concentration of 5mg / mL and 1.5...

Embodiment 2

[0045]A preparation method of a non-volatile resistive random access memory with adjustable writing voltage is carried out according to the following steps:

[0046]1) Cleaning treatment of Glass / ITO (substrate / bottom electrode): Put it in deionized water, ethanol, acetone, and deionized water in sequence, ultrasonically for 20 minutes, and blow dry with high-purity nitrogen; finally put the substrate in oxygen Treated in a plasma cleaner for 3 minutes.

[0047]2) Preparation of polymer mixed solution: Dissolve polymethyl methacrylate and polystyrene in tetrahydrofuran respectively to form a 3 mg / mL solution. Prepare a 10mL sample bottle, put in the magnet, add 3.5mL of polymethyl methacrylate solution with a concentration of 3mg / mL and 1.5mL of polystyrene solution with a concentration of 3mg / mL, stir for 5min until the mixed solution is uniform and ready for use .

[0048]3) Preparation of the resistive functional layer with nano-holes on the surface: the mixed solution spin coating method...

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Abstract

The invention discloses a nonvolatile resistive random access memory with an adjustable write-in voltage and a preparation method thereof, and belongs to the field of resistive random access memory devices. The memory device includes a substrate, a bottom electrode, a resistive function layer, and a top electrode. and the resistive function layer is an organic polymer film which is prepared by spin-coating a mixed solution of two polymers and contains nano-pores on the surface. By changing the spin-coating conditions of the mixed solution, the sizes of the thin film holes can be adjusted, andthen the accurate regulation and control of the device write-in voltage are achieved. The memory device provided by the invention is simple in structure and is easy to process, shows nonvolatile storage characteristics, can realize the accurate regulation and control on the write-in voltage, and has a wide application prospect in the field of information storage.

Description

Technical field[0001]The present invention relates to the technical field of a novel semiconductor memory, in particular to a nonvolatile resistive random access memory with adjustable writing voltage and a preparation method thereof.Background technique[0002]In recent years, the rapid development of information technology and the "explosive" growth of multimedia applications have placed higher demands on data storage. Therefore, it has become a pursuit of people to obtain storage devices with excellent performance and low price to realize the storage of massive data. Among them, resistive random access memory has received extensive attention from scientific researchers because of its simple "sandwich" structure, high storage density, strong design and low energy consumption.[0003]Memory can be divided into volatile storage and non-volatile storage according to its storage type. Volatile storage will lose stored data when the device is powered off, while non-volatile storage will no...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00
CPCH10N70/881H10N70/021Y02D10/00
Inventor 刘举庆聂毅杰李银祥
Owner NANJING UNIV OF TECH
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