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Partial depletion photodetector in absorption region of 850nm wavelength band and preparation method thereof

A photodetector and absorption region technology, applied in the field of photodetectors, can solve the problem that photodetectors cannot meet the requirements at the same time, and achieve the effects of low cost, stable device performance and low dark current

Active Publication Date: 2022-05-13
SHANGHAI TECH UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The technical problem to be solved by the present invention is: the existing photodetectors cannot simultaneously meet the main requirements of the short-distance optical interconnection system for the performance of photodetectors, mainly including high responsivity, low noise, and high frequency response bandwidth

Method used

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  • Partial depletion photodetector in absorption region of 850nm wavelength band and preparation method thereof
  • Partial depletion photodetector in absorption region of 850nm wavelength band and preparation method thereof
  • Partial depletion photodetector in absorption region of 850nm wavelength band and preparation method thereof

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Embodiment

[0030] A method for preparing a GaAs / AlGaAs-based partially depleted photodetector in the 850nm band absorption region, comprising the following steps:

[0031] Step 1: sequentially grow a buffer layer b, a cathode contact layer c, a transition layer d, a depleted GaAs absorbing layer e, a non-depleted GaAs absorbing layer f, and a cover Layer g and anode contact layer h as figure 1 Shown; the parameters of each layer are shown in Table 1:

[0032] Table 1

[0033] Material Thickness (nm) Doping concentration (cm -3 )

doping type GaAs anode contact layer 50 1×10 19

p Al 0.15 Ga 0.85 As cover layer

400 2×10 18

p Non-depleted GaAs absorber layer 100 2×10 18

p Non-depleted GaAs absorber layer 100 1×10 18

p Non-depleted GaAs absorber layer 100 5×10 17

p Non-depleted GaAs absorber layer 100 2×10 17

p Depleted GaAs absorber layer 1200 15

i Al 0.05 Ga 0.95 As transition la...

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Abstract

The invention discloses a partially depleted photodetector in an absorption region of 850nm and a preparation method thereof. The photodetector includes a semiconductor body, a cathode, an anode, a passivation film, and the surfaces of the two metal electrodes are connected to a coplanar waveguide electrode; the structure of the semiconductor body includes a semi-insulating GaAs substrate, a buffer layer, and a cathode contact compounded in sequence. layer, transition layer, depleted GaAs absorber layer, non-depleted GaAs absorber layer, cap layer, anode contact layer. The preparation method is as follows: sequentially grow the cathode contact layer buffer layer, the cathode contact layer, the transition layer, etc. on the semi-insulating GaAs substrate to obtain the semiconductor body; prepare the annular anode, the first step, the cathode, the second step, and the passivation film , Coplanar waveguide electrodes. The invention can work in the 850nm band, has the characteristics of low dark current, high responsivity, and high response bandwidth, and can meet the requirements of the short-distance optical interconnection system in the 850nm band.

Description

technical field [0001] The invention relates to a semiconductor photodetector, in particular to a partially depleted photodetector based on GaAs / AlGaAs absorption region working in the 850nm band, and belongs to the technical field of photodetectors. Background technique [0002] In some high-performance computing systems such as drug research and development, environmental climate change simulation, etc., there is a high bandwidth requirement for the data transmission speed of the system. In this short-distance data transmission system, compared with traditional electrical interconnection, the use of optical interconnection has more advantages in energy consumption ratio, cost and reliability. Today's short-distance optical interconnection system is mainly composed of a vertical cavity surface emitting laser (Vertical Cavity Surface Emitting Laser, VCSEL) working in the 850nm band, a multi-mode fiber (Multi-Mode Fiber, MMF) and a photodetector. Performance requirements mai...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0304H01L31/105H01L31/18
CPCH01L31/03046H01L31/105H01L31/1844Y02P70/50
Inventor 陈佰乐谢治阳
Owner SHANGHAI TECH UNIV