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Two-dimensional layered tellurium-doped germane and preparation method thereof

A two-dimensional layered and germane technology, applied in chemical instruments and methods, metal hydrides, inorganic chemistry, etc., can solve problems such as low electron mobility and limited applications

Active Publication Date: 2021-03-02
TIANJIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Graphene has ultra-high electron mobility, but its zero bandgap limits its application in fields such as field-effect transistors
Transition metal sulfides such as MoS2, WS2, etc., have a suitable band gap (1-2eV), and the on-off ratio can reach 108 , but its electron mobility is not high (the value is only a few square centimeters per volt per second)

Method used

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  • Two-dimensional layered tellurium-doped germane and preparation method thereof
  • Two-dimensional layered tellurium-doped germane and preparation method thereof
  • Two-dimensional layered tellurium-doped germane and preparation method thereof

Examples

Experimental program
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Effect test

example 1

[0019]Weigh 0.01molCa, 0.0196molGe and 0.2mmolGeTe in the glove box, and add them to the quartz tube in turn. Use a vacuum tube sealing system for fusion and sintering in a vacuum tube furnace. The temperature control program is 300min from room temperature to 1050℃. After maintaining for 1200min, the temperature is lowered to room temperature at 5℃ / min. Take 1 g of the precursor and 150 mL of hydrochloric acid to react at -35°C and stir for 7 days. The obtained product was washed three times with deionized water and ethanol, and dried in vacuum at room temperature for 6 hours to obtain the two-dimensional layered semiconductor material tellurium-doped germane HGe0.99Te0.01.

example 2

[0021]Weigh 0.01mol Ca, 0.0188molGe and 0.6molGeTe in the glove box, add them to the quartz tube in turn, use a vacuum tube sealing system for fusion sealing, and sinter in a vacuum tube furnace. The temperature control program is 300min from room temperature to 1050 ℃, after maintaining for 1200min, reduce the temperature to normal temperature at 5℃ / min. Take 1 g of the precursor and 150 mL of hydrochloric acid to react at -35°C and stir for 7 days. The obtained product was washed three times with deionized water and ethanol, and dried in vacuum at room temperature for 6 hours to obtain the two-dimensional layered semiconductor material tellurium-doped germane HGe0.97Te0.03.

example 3

[0023]Weigh 0.01mol Ca, 0.018mol Ge, and 1mmol GeTe in the glove box, add them to the quartz tube in turn, use a vacuum tube sealing system for fusion sealing, and sinter in a vacuum tube furnace. The temperature control program is 300min from room temperature to After maintaining at 1050°C for 1200min, the temperature will be reduced to room temperature at 5°C / min. Take 1 g of the precursor and 150 mL of hydrochloric acid to react at -35°C and stir for 7 days. The obtained product was washed three times with deionized water and ethanol, and dried in vacuum at room temperature for 6 hours to obtain the two-dimensional layered semiconductor material tellurium-doped germane HGe0.95Te0.05.

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Abstract

The invention discloses a two-dimensional layered tellurium-doped germane and a preparation method thereof. The preparation method comprises the following steps of: encapsulating Ca, GeTe and Ge in atubular furnace according to a stoichiometric ratio, carrying out program temperature control to obtain a CaGe2-2xTe2x (x is equal to 0.01-0.05) precursor, and reacting the obtained precursor with hydrochloric acid at a low temperature to obtain the two-dimensional layered semiconductor material tellurium-doped germane HGe1-xTex (x is equal to 0.01-0.05). The two-dimensional material has great potential application in the aspects of photoelectric devices, energy storage, photocatalysis and the like.

Description

Technical field[0001]The invention relates to the preparation of doped two-dimensional layered germane, belonging to the technical field of preparation of two-dimensional germanium-based semiconductor materials, in particular to a two-dimensional layered tellurium doped germane and a preparation method.Background technique[0002]Since the advent of graphene in 2004, a variety of new two-dimensional materials have continuously emerged, and they have great application potential in the fields of optoelectronic devices, photocatalysis, and energy storage. Graphene has ultra-high electron mobility, but its zero band gap limits its application in field-effect transistors. Transition metal sulfides such as MoS2, WS2Etc., with a suitable band gap (1-2eV), the switching ratio can reach 108, But its electron mobility is not high (the value is only a few square centimeters per volt per second). In comparison, germanene has a very high carrier mobility (105cm2 V-1s-1), although it is still a gra...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B6/06
CPCC01B6/06C01P2002/20C01P2002/72C01P2004/03
Inventor 封伟王宇冯奕钰赵付来张鑫梁雪静
Owner TIANJIN UNIV