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Multi-element refractory metal element co-doped nano NiAl-based alloy film, and preparation method and application thereof

A technology of metal elements and base alloys, applied in metal material coating process, vacuum evaporation plating, coating, etc., can solve the problems of reducing the high-temperature hardness of nano-NiAl alloy films, achieve stability and excellent mechanical properties, and reduce environmental pollution Small, solve the effect of insufficient hardness

Active Publication Date: 2021-03-09
NANJING INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In summary, grain growth and coarsening at high temperature reduces the high-temperature hardness of nano-NiAl alloy films, which has become a prominent problem that limits the application of nano-NiAl alloy films in high-temperature MEMS support components.

Method used

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  • Multi-element refractory metal element co-doped nano NiAl-based alloy film, and preparation method and application thereof
  • Multi-element refractory metal element co-doped nano NiAl-based alloy film, and preparation method and application thereof
  • Multi-element refractory metal element co-doped nano NiAl-based alloy film, and preparation method and application thereof

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Experimental program
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Embodiment 1

[0027] A method for preparing a multi-component refractory metal element co-doped nano NiAl-based alloy film, the specific implementation process is as follows:

[0028] Step (1): The multi-element refractory metal element target material selects 3 pieces of W target (99.99% purity) and 3 Mo targets (99.99% purity) each with a fan-shaped central angle of 60°, and splicing the fan-shaped targets in a symmetrical manner. The area ratio of W and Mo in the disc-shaped target is 1:1; the NiAl alloy target uses Ni and Al targets with a fan-shaped central angle of 30° and a purity of more than 99.99wt.%, and 9 fan-shaped Ni targets are spliced ​​in a symmetrical manner Combined with 3 sector-shaped Al targets to form a disc-shaped target. The area percentage of the Ni target and the Al target is 75% Ni and 25% Al; the disc-shaped target obtained by splicing has a diameter of 60 mm and a thickness of 5 mm. Install the disc-shaped target to the target fixing position.

[0029] Step (...

Embodiment 2

[0034] A method for preparing a multi-component refractory metal element co-doped nano-NiAl-based alloy film, the specific implementation process is as follows:

[0035] Step (1): The multi-element refractory metal element target material selects 3 pieces of W target (99.99% purity) and 3 Mo targets (99.99% purity) each with a fan-shaped central angle of 60°, and splicing the fan-shaped targets in a symmetrical manner. The area ratio of W and Mo in the disc-shaped target is 1:1; the NiAl alloy target uses Ni and Al targets with a fan-shaped central angle of 30° and a purity of more than 99.99wt.%, and 9 fan-shaped Ni targets are spliced ​​in a symmetrical manner Combined with 3 sector-shaped Al targets to form a disc-shaped target. The area percentage of Ni target and Al target is 75% Ni and 25% Al; the disc-shaped target obtained by splicing has a diameter of 60mm and a thickness of 5mm. Install the disc-shaped target to the target fixing position.

[0036] Step (2): SiO wi...

Embodiment 3

[0041] A method for preparing a multi-component refractory metal element co-doped nano NiAl-based alloy film, the specific implementation process is as follows:

[0042] Step (1): The multi-element refractory metal element target material selects 3 pieces of W target (99.99% purity) and 3 Mo targets (99.99% purity) each with a fan-shaped central angle of 60°, and splicing the fan-shaped targets in a symmetrical manner. The area ratio of W and Mo in the disc-shaped target is 1:1; the NiAl alloy target uses Ni and Al targets with a fan-shaped central angle of 30° and a purity of more than 99.99wt.%, and 9 fan-shaped Ni targets are spliced ​​in a symmetrical manner Combined with 3 sector-shaped Al targets to form a disc-shaped target. The area percentage of the Ni target and the Al target is 75% Ni and 25% Al; the disc-shaped target obtained by splicing has a diameter of 60mm and a thickness of 5mm. Install the disc-shaped target to the target fixing position.

[0043] Step (2)...

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Abstract

The invention discloses a preparation method of a multi-element refractory metal element co-doped nano NiAl-based alloy film. The preparation method solves the problem that a NiAl-based alloy film ispoor in nanocrystalline thermal stability and insufficient in high-temperature mechanical property at a high temperature through a magnetron sputtering technology. The invention further discloses themulti-element refractory metal element co-doped nano NiAl-based alloy film and application thereof. According to the preparation method, through doping of a small amount of multi-element refractory metal elements, the high-temperature nano hardness can reach 14.2 GPa after high-temperature annealing at 700 DEG C, the average grain size can reach 26.3 nm, the application requirement of a nanocrystalline NiAl alloy film material with good high-temperature thermal stability and mechanical properties is met, and a foundation is laid for application of the NiAl-based film in the aspect of high-temperature MEMS.

Description

technical field [0001] The invention relates to a method for co-doping a nano-NiAl-based alloy film with multiple refractory metal elements, and belongs to the field of material technology. Background technique [0002] Today's technology is changing with each passing day. Whether it is automobiles, aerospace, Internet of Things, or public facilities, it is inseparable from the development and application of micro sensors. , environmental monitoring and other related fields have broad application prospects. Si-based materials, which are widely used in micro-nano mechanical systems, have high intrinsic brittleness and poor micromachining performance, which have become constraints. With the deepening of the research and application of microelectromechanical systems (MEMS), in order to adapt to the development trend of miniaturization of microelectromechanical system (MEMS) support components and the miniaturization of space layout, it is necessary to find a thin film that is ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/16
CPCC23C14/3407C23C14/352C23C14/165
Inventor 张超马晨刘释轩张保森朱帅帅
Owner NANJING INST OF TECH