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Method for manufacturing photonic crystal and photonic crystal

A technology of photonic crystals and silicon on insulators, applied in the field of methods and photonic crystals, making photonic crystals, can solve the problems that the periodic hole structure exceeds the limit of the lithography machine capacity, etc.

Inactive Publication Date: 2021-03-09
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The main purpose of the present invention is to provide a method for making photonic crystals and photonic crystals, adopt atomic layer deposition sidewall technology, reduce the size of holes, and realize photonic crystal structures beyond the scope of photolithography machines, so as to solve the problems in the existing preparation methods. The technical problem that the periodic hole structure formed by the crystal exceeds the limit of the lithography machine capacity

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  • Method for manufacturing photonic crystal and photonic crystal
  • Method for manufacturing photonic crystal and photonic crystal
  • Method for manufacturing photonic crystal and photonic crystal

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Embodiment Construction

[0030] Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. Although exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be limited by the embodiments set forth herein. Rather, these embodiments are provided for more thorough understanding of the present disclosure and to fully convey the scope of the present disclosure to those skilled in the art.

[0031] The invention discloses a method for making a photonic crystal, and the method for making the photonic crystal includes the following steps:

[0032] Provides silicon-on-insulator (SOI) substrates1, reference Figure 1a As shown, the SOI substrate 1 includes a supporting substrate 100 , a buried oxide layer 200 (BOX layer) on the supporting substrate 100 and a silicon layer 300 on the BOX layer 200 .

[0033] It should be n...

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Abstract

The invention provides a method for manufacturing a photonic crystal and the photonic crystal. The method for manufacturing the photonic crystal comprises the following steps of providing a silicon-on-insulator (SOI) substrate, depositing a hard mask layer on the silicon-on-insulator (SOI) substrate, forming a groove in the hard mask layer, forming a side wall in the groove by adopting an atomic layer deposition (ALD) process, and forming a hole structure on the silicon-on-insulator (SOI) substrate. An atomic layer deposition side wall process is adopted, the hole size is reduced, and a photonic crystal structure exceeding the capacity range of a photoetching machine is realized.

Description

technical field [0001] The invention relates to the technical field of photonic crystal manufacturing, in particular to a method for manufacturing a photonic crystal and the photonic crystal. Background technique [0002] Photonic crystals (also known as photonic bandgap materials) From the perspective of material structure, photonic crystals are a type of artificially designed and manufactured crystals with periodic dielectric structures on the optical scale. Similar to the modulation of electronic wave functions by semiconductor lattices, photonic bandgap materials can modulate electromagnetic waves with corresponding wavelengths—when electromagnetic waves propagate in photonic bandgap materials, they are modulated due to Bragg scattering, and the energy of electromagnetic waves forms an energy band structure . There is a band gap between the energy band and the energy band, that is, the photonic band gap. Photons with energies within the photonic bandgap cannot enter th...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02B1/00G03F7/00
CPCG02B1/005G03F7/0005
Inventor 唐波张鹏杨妍李志华刘若男李彬黄凯谢玲王文武
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI