Silicon-based filter chip and frequency offset correction method thereof

A filter chip, silicon-based technology, applied in impedance networks, electrical components, electrical solid devices, etc., can solve the problems of instability, product batch frequency offset, difficult processing technology, etc. Tone, small volume effect

Pending Publication Date: 2021-03-09
昆山鸿永微波科技有限公司
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Problems solved by technology

However, due to the difficult and unstable processing technology, a mature process flow has not been formed, and the freq

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  • Silicon-based filter chip and frequency offset correction method thereof
  • Silicon-based filter chip and frequency offset correction method thereof

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Embodiment Construction

[0022] The following will clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only some of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0023] see Figure 1~Figure 2 , the embodiment of the present invention includes:

[0024] like figure 1 A silicon-based filter chip shown includes: a laser through-hole 13 and a silicon cavity resonant unit 11. In this embodiment, three silicon cavity resonant units are used, namely the first silicon cavity resonant unit 111 and the second silicon cavity resonant unit 111. The cavity resonant unit 112 and the third silicon cavity resonant unit 113 , the first silicon cavity resonant unit 111 , the second silicon c...

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Abstract

The invention relates to a silicon-based filter chip and a frequency offset correction method thereof. The invention belongs to the technical field of filter circuits. The silicon-based filter chip comprises n silicon cavity resonance units, and each silicon cavity resonance unit comprises a first metal layer, a high-resistance silicon dielectric layer and a second metal layer which are sequentially arranged from top to bottom; each silicon cavity resonance unit is composed of a full through hole and a semi-through hole which penetrate through the first metal layer, the high-resistance silicondielectric layer and the second metal layer, and the side wall of each through hole is sputtered and electroplated with gold. Besides, laser through holes are also formed, penetrate through the firstmetal layer, the high-resistance silicon dielectric layer and the second metal layer, and are distributed on the two sides of the through holes of the two adjacent silicon cavity resonance units or at the joint of the metal layers of the two adjacent silicon cavity resonance units. And the passband frequency can be moved upwards to realize a correction function of downward deviation of the passband frequency through laser point burning punching at a corresponding position. The silicon-based filter chip has the advantages of high Q value and low loss.

Description

technical field [0001] The invention relates to a silicon-based filter chip and a frequency offset correction method thereof. It belongs to the technical field of filter circuits. Background technique [0002] Filters play an important role in frequency-selective filtering in RF / microwave systems. The main performance indicators include loss, bandwidth, out-of-band selectivity, and circuit size. Traditional cavity filters and LC filters have many problems, such as large size, high manufacturing cost, and difficult integration with multi-chip interconnection. [0003] The silicon-based filter realized by silicon microelectromechanical system technology has the obvious advantages of high Q value, low dropout loss and small size in the millimeter wave frequency band, and can be compatible with conventional monolithic microwave integrated circuit (Monolithic Microwave Integrated Circuit, MMIC) process Such advantages have not only become the development trend of various elec...

Claims

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Application Information

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IPC IPC(8): H01L23/66H03H9/02
CPCH01L23/66H03H9/02393
Inventor 万晶梁晓新
Owner 昆山鸿永微波科技有限公司
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