Silicon controlled rectifier device applied to electrostatic protection of deep submicron circuit

Abstract

The invention relates to the technical field of silicon controlled rectifier electrostatic protection, and particularly relates to a silicon controlled rectifier device applied to electrostatic protection of a deep submicron circuit . In the structure, a first N-type heavily doped region and a first P-type heavily doped region are arranged at the upper part in an N-type well region side by side toform a first blank doped region; a second N-type heavily doped region and a second P-type heavily doped region are arranged at the upper part in the P-type well region side by side to form a second blank doped region; polycrystalline silicon and the first blank doped region have an overlapping region and cover the top of the second blank doped region; and a silicide barrier layer and the first P-type heavily doped region have an overlapping region, and the silicide barrier layer and the polycrystalline silicon have an overlapping region, and the silicide barrier layer also covers a polycrystalline silicon uncovered region in the top of the second blank doped region. According to the invention, the good current limiting capability of the silicide barrier layer is utilized, the capability of the SCR for discharging electrostatic current is improved, the SCR is enabled to have low maintaining voltage, and the electrostatic discharge protection requirement of the deep submicron circuit ismet.

Description

technical field [0001] The invention relates to the technical field of thyristor static protection, in particular to a thyristor device applied to static protection of deep submicron circuits. Background technique [0002] Static electricity exists all the time in nature. When the external environment of the chip or the static charge accumulated inside the chip flows into or out of the chip through the pins of the chip, the instantaneous current (peak value can reach several amperes) or voltage will damage the integrated circuit. disable the function of the chip. Effective ESD (Electron Static Discharge, electrostatic discharge) enables the protective device to quickly open and discharge ampere-level current in an electrostatic event, and at the same time, the voltage between the clamp port or the power supply / ground is below the breakdown voltage of the core circuit to achieve protection The core circuit is not damaged by static electricity, and when the circuit is working...

AI Technical Summary

Problems solved by technology

Therefore, the thyristor SCR is an ideal electrostatic protection device, but due to its own characteristics, the device still has imperfections such as high turn-on voltage and low maintenance voltage.

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