High frequency module and communication device

Abstract

The invention provides a high-frequency module (1), comprising: a module substrate (90) having main surfaces (90a and 90b); a semiconductor IC (10) having main surfaces (10a and 10b), according to the module substrate (90), main surfaces The surface (10a) and the main surface (10b) are mounted on the main surface (90b) in sequence; a plurality of columnar electrodes (150A) extend in the vertical direction of the main surface (90b); and a plurality of columnar electrodes (150B), The cross-sectional area is smaller than that of the columnar electrode (150A). When viewed from above, the semiconductor IC (10) includes sides (100a and 100b) parallel to each other and sides (100c and 100d) parallel to each other. The area (Aa) between and the area (Ab) between the side (190b) and the side (100b) are respectively equipped with columnar electrodes (150A), and the area (Ac) between the side (190c) and the side (100c) A columnar electrode (150B) is provided.

Description

technical field [0001] The invention relates to a high-frequency module and a communication device. Background technique [0002] Patent Document 1 discloses a module with built-in circuit components (high-frequency module) in which a surface mount component is mounted on a first main surface of a multilayer circuit board and a semiconductor element is mounted on a second main surface. In this module with built-in circuit components, a plurality of via holes and pads are arranged so as to surround the semiconductor element in a planar view of the multilayer circuit board. Therefore, the module with built-in circuit components is useful as a high-frequency module excellent in high-frequency operation, noise resistance, heat dissipation, and miniaturization. [0003] Patent Document 1: Japanese Patent Laid-Open No. 2007-281160 [0004] However, as in the module with built-in circuit components (high-frequency module) disclosed in Patent Document 1, when the semiconductor ele...

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Problems solved by technology

[0004] However, as in the module with built-in circuit components (high-frequency module) disclosed in Patent Document 1, when the semiconductor element (semiconductor IC) is surrounded by a plurality of via holes and pads in the plan view, the second main surface The degree of freedom in the configuration of semiconductor elements (semiconductor ICs) is limited

Furthermore, since the degree of freedom of arrangement of the semiconductor element is limited, it is difficult to optimize (shortimize) the connection wiring with the surface mount component arranged on the first main surface, for example, and there is a possibility that the high-frequency transmission characteristic is degraded.

In addition, since a plurality of via holes and pads having the same diameter are arranged to face all the outer edges of the semiconductor element (semiconductor IC), a large space for arranging the via holes and pads is required.

Therefore, the multilayer circuit board cannot be miniaturized, for example, the degree of freedom in arranging the module with built-in circuit components (high frequency module) on the external (mother) board is limited.

[0005] In this way, in the module with built-in circuit components (high-frequency module) disclosed in Patent Document 1, although a plurality of through-holes and pads having the same diameter are arranged so as to surround the semiconductor element (semiconductor IC), it is possible to ensure Electrical performance such as high-frequency operation and noise resistance, and mechanical performance such as mounting strength, but there is a problem that the degree of freedom in design related to the arrangement of semiconductor elements (semiconductor ICs) and the degree of freedom in design due to the size of high-frequency modules cannot be ensured.

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