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Base station for growing monocrystal diamond by using microwave plasma technology

A technology for microwave plasma and single crystal growth, applied in crystal growth, single crystal growth, single crystal growth and other directions, can solve the problems of discharge, affecting the distribution of microwave electric field, setting air intake pipes, etc., to achieve simple process operation and reduce Normal growth, high quality results

Active Publication Date: 2021-03-12
SHANGHAI ZHENGSHI TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the uniqueness of microwaves, it is not possible to arrange the intake pipes inside the vacuum chamber at will.
Because the pipe is generally made of metal, it is easy to cause discharge in the microwave electric field, and the metal will affect the distribution of the microwave electric field

Method used

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  • Base station for growing monocrystal diamond by using microwave plasma technology
  • Base station for growing monocrystal diamond by using microwave plasma technology
  • Base station for growing monocrystal diamond by using microwave plasma technology

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] The process parameters of diamond growth are: microwave power 4000W, deposited air pressure 21.0KPa, H. The first air supply system is provided 2 CH 4 The flow rate is 200: 3.0 (sccm), deposition temperature 1060 ° C, all of the valves A, B, C, and D close. Diamond seeds for 160 hours. (Note: SCCM: Standard cubic centimeter per minute).

[0030] See the result of seed crystal growth figure 2 Indicated. The growth rate of the surface of the seed crystal is: 16.6 μm / h.

Embodiment 2

[0032] The process parameters of diamond growth are: microwave power 4000W, deposited air pressure 21.0KPa, H. The first air supply system is provided 2 CH 4 The flow rate is 200: 3.0 (SCCM), deposition temperature 1060 ° C; the second air supply pipeline is accessible 2 Through the valve A, the valve B is closed, the valve C is closed, the valve D is opened, so that the bottom air trachea in the substrate recess is connected to the second air supply path, release O 2 Adjust the flow controller on the pipeline of the valve A to make the O 2 The gas flow is 0.03 sccm; the top trachea is connected to the second road pit, and the gas in the vacuum is exhausted, adjust the flow controller on the pipeline of the valve D, and the gas flow in the line is 5.0. Diamond seed growth time of 160 h.

[0033] See the result of seed crystal growth image 3 Indicated. The growth rate of the surface of the seed crystal is: 18.1 microns per hour.

Embodiment 3

[0035] The process parameters of diamond growth are: microwave power 4000W, deposited air pressure 21.0KPa, H. The first air supply system is provided 2 CH 4 The flow rate is 200: 3.0 (SCCM), deposition temperature 1060 ° C; the second air supply pipeline is accessible 2 The entire growth stage is divided into two phases, stage one: valve A open, valve B is closed, valve C is closed, the valve D is opened, so that the bottom air trachea in the pits of the substrate is connected to the second air supply, release O 2 Adjust the flow controller on the pipeline of the valve A to make the O 2 The gas flow is 0.03 sccm; the top trachea is connected to the second airway in the pit, and the gas in the vacuum is exhausted, and the flow controller on the line D of the valve D is adjusted, and the gas flow in the tube is 5.0sccm; Diamond seed growth time 80h; second stage: valve A, valve B open, valve C open, valve D Off, so that the top trachea in the substrate recess is connected to the se...

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Abstract

The invention provides a base station for growing monocrystal diamond by using a microwave plasma technology. The base station comprises a circular microwave plasma substrate table, wherein a spherical plasma excited by microwaves is tightly attached to the surface of the substrate table and located above the substrate table; a pit is formed in the axial symmetry center of the surface of the substrate table; a crystal support for diamond growth can be placed in the pit; an annular metal thin pipe is arranged at the bottom of the pit and around the crystal support, small holes are formed in thethin pipe, and the thin pipe is connected with an air supplying / exhausting system; another annular metal thin pipe is arranged at the top of the pit and around the crystal support, small holes are formed in the another annular metal thin pipe, and the another annular metal thin pipe is connected with an air extracting / supplying system; and the top thin pipe and the bottom thin pipe in the pit arecontrolled by an external valve to realize the exchange of air exhausting and air supplying functions. According to the above scheme, normal growth of diamond on the upper surface of a seed crystal can be prevented from being affected by non-diamond carbon accumulated on the side face of the seed crystal, and meanwhile, a seed crystal surface growth speed can be increased.

Description

Technical field [0001] The present invention belongs to the field of vacuum microelectronics, and more particularly to a method of preparing a single crystal diamond and a method of improving growth quality when growning a single crystal diamond. Background technique [0002] Diamonds, high-quality single crystal diamonds, because of the excellent performance, there is a wide range of applications in many fields. Natural diamonds are rare, the price is expensive; the artificial diamond prepared by high temperature and high pressure method (HTHP method), due to the metal catalyst, also affects the nature of diamond; microwave plasma chemical vapor deposition (MPCVD) technology, at a specific seed The surface can grow high quality single crystal diamonds, is an ideal technology for the growth of artificial diamonds. [0003] The microwave plasma chemical vapor deposition apparatus generally includes a microwave system, a vacuum system, a gas supply system, and a plasma reaction cha...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/04C30B25/00
CPCC30B29/04C30B25/00
Inventor 满卫东龚闯朱长征吴剑波
Owner SHANGHAI ZHENGSHI TECH CO LTD