Semiconductor device and manufacturing method thereof

Abstract

The invention discloses a semiconductor device and a manufacturing method thereof. The method comprises the steps of forming a first gate stack on a first well region of a substrate; shielding at least part of a second region of the substrate by using a photoresist mask, and forming a first source region, first drain region and first doped region of a second doping type in each of the first well region and the second region of the substrate respectively by using the first gate stack as a hard mask; and removing the photoresist mask, forming a second doped region of a first doped type in the second well region of the second region by adopting the first gate stack as a hard mask, and enabling the second doped region to be in contact with the first doped region to form a PN structure, whereinin the step of forming the second doped region, a dopant of the second doping type in the first source regions, first drain regions and the first doped region is compounded with a dopant of a first doping type, and the equivalent dopant of the first source regions, the first drain regions and the first doped region is maintained to be of the second doping type. According to the manufacturing method, additional mask and photoetching steps can be omitted when the PN structure is formed, so that the manufacturing cost can be reduced.

Description

technical field [0001] The present application relates to the technical field of semiconductors, and more specifically, to a semiconductor device and a manufacturing method thereof. Background technique [0002] The diode mainly includes a PN structure, and its reverse breakdown voltage is usually equal to the reverse breakdown voltage of its own PN structure. Currently, a heavily doped N region (or P region) and a lightly doped P region (or N region) are provided to adjust the doping concentration of the lightly doped region to achieve a required reverse breakdown voltage. [0003] The stable voltage of the diode mainly depends on the doping concentration of the lightly doped P region (or N region), and it is found in the practical process that the ion implantation dose of the lightly doped P region (or N region) is very low. The order-of-magnitude ion implantation process requires special photolithography and doping (ion implantation) process steps, resulting in relativel...

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Problems solved by technology

[0003]The stable voltage of the diode mainly depends on the doping concentration of the lightly doped P region (or N region), and it is found in the practical process that the lightly doped P The ion implantation dose of the region (or N region) is very low. This order of magnitude ion implantation process requires special photolithography and doping (ion implantation) process steps, resulting in relatively high manufacturing costs for semiconductor devices.

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