Moisture-proof structure for optoelectronic device and preparation method of moisture-proof structure

A technology for optoelectronic devices and electronic devices, which is applied in the fields of electro-solid devices, semiconductor/solid-state device manufacturing, nanotechnology for materials and surface science, etc. and other problems, to achieve the effects of strong adaptability to extreme environments, increased distribution range and quantity, and strong water and oxygen erosion capabilities.

Inactive Publication Date: 2021-03-16
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Although the organic moisture-proof products commonly used in the market have certain effects, the traditional organic moisture-proof films are not resistant to high temperatures and are prone to bubbles at high temperatures; they are weak in resistance to cold and heat shocks and are prone to cracks in environments with large temperature differences. It plays an effective protective role, so it is difficult to meet the needs of existing products for moisture-proof performance. In addition, organic molecules are sensitive to ultraviolet radiation, and the structure is extremely unstable when exposed to ultraviolet light, resulting in short moisture-proof life; at the same time, due to the porous carbon dioxide Silicon (SiO 2 ) has great advantages in structure and water resistance and has begun to be widely used in the moisture-proof industry. Various types of SiO have been used 2 The moisture-proof film made of materials has also improved the moisture-proof of electronic products
[0004] However, existing SiO 2 Most of the solvents used in moisture-proof materials contain stupid, and the bonding performance is poor; moreover, SiO 2 The film is easy to disperse unevenly during the preparation process, resulting in uneven film and bad spots, thereby increasing costs and reducing efficiency

Method used

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  • Moisture-proof structure for optoelectronic device and preparation method of moisture-proof structure
  • Moisture-proof structure for optoelectronic device and preparation method of moisture-proof structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] Such as figure 1 As shown, the moisture-proof film that can be used for optoelectronic devices has a total thickness of 20 μm, the mixed solvent is ethylene glycol, polymer polyelectrolyte type 731 dispersant, silane coupling agent YGO-1204 and water-based emulsion, and the moisture-proof agent is a roller Coating, LB film method, knife coating, spin coating, drop coating, spray coating, pulling method, casting method, dip coating, inkjet printing, self-assembly or screen printing have a stable film structure and a large contact area 15% water pine root extract and glycerin mixture with green and environmental protection properties, the protective agent is nano-scale porous SiO with ethylene glycol as a solvent 2 Granules; the composition is as follows:

[0037] Mixed solvent 60%, moisture-proof agent 30%, protective agent 10%;

[0038] The preparation method is as follows:

[0039] 1. First clean the optoelectronic device or the surface substrate to be sprayed, and ...

Embodiment 2

[0044] Such as figure 1 As shown, the moisture-proof film that can be used for optoelectronic devices has a total thickness of 20 μm, the mixed solvent is ethylene glycol, polymer polyelectrolyte type 731 dispersant, silane coupling agent YGO-1204 and water-based emulsion, and the moisture-proof agent is a roller Coating, LB film method, knife coating, spin coating, drop coating, spray coating, pulling method, casting method, dip coating, inkjet printing, self-assembly or screen printing have a stable film structure and a large contact area 15% water pine root extract and glycerin mixture with green and environmental protection properties, the protective agent is nano-scale porous SiO with ethylene glycol as a solvent 2 particles. The ingredients are as follows:

[0045]Mixed solvent 45%, moisture-proof agent 40%, protective agent 15%;

[0046] The preparation method is as follows:

[0047] 1. First clean the optoelectronic device or the surface substrate to be sprayed, an...

Embodiment 3

[0052] Such as figure 1 As shown, the moisture-proof film that can be used for optoelectronic devices has a total thickness of 20 μm, the mixed solvent is ethylene glycol, polymer polyelectrolyte type 731 dispersant, silane coupling agent YGO-1204 and water-based emulsion, and the moisture-proof agent is a roller Coating, LB film method, knife coating, spin coating, drop coating, spray coating, pulling method, casting method, dip coating, inkjet printing, self-assembly or screen printing have a stable film structure and a large contact area 15% water pine root extract and glycerin mixture with green and environmental protection properties, the protective agent is nano-scale porous SiO with ethylene glycol as a solvent 2 particles. The ingredients are as follows:

[0053] Mixed solvent 55%, moisture-proof agent 35%, protective agent 10%;

[0054] The preparation method is as follows:

[0055] 1. First clean the optoelectronic device or the surface substrate to be sprayed, a...

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Abstract

The invention discloses a moisture-proof structure capable of being used for an optoelectronic device and a preparation method thereof, and belongs to the field of moisture-proof film structures. Themoisture-proof thin film structure sequentially comprises an attachment surface and a thin film structure from bottom to top, and the total thickness of the thin film structure does not exceed 20 microns; the film structure is formed by spraying a mixed solution of a mixed solvent, a moisture-proof agent and a protective agent; the film structure comprises the following components in percentage bymass: 40-60% of a mixed solvent, 30-40% of a moisture-proof agent and 10-20% of a protective agent, The film structure is prepared through the following steps: cleaning the surface of an optoelectronic device or the surface of a substrate, preparing a mixed solvent, a moisture-proof agent and a protective agent respectively, and mixing the above materials in proportion; spraying the mixed solution to the surface of an optoelectronic device or the surface of a substrate by adopting a spraying method; and then performing drying treatment. The problems that an existing SiO2 moisture-proof material is insufficient in environmental protection property, poor in bonding performance, uneven in film and defective in appearance can be solved.

Description

technical field [0001] The invention belongs to the field of moisture-proof thin film structures, and in particular relates to a moisture-proof structure applicable to optoelectronic devices and a preparation method thereof. Background technique [0002] The improvement of the efficiency of human society has led to the improvement of the efficiency of all walks of life, so the requirements for the power consumption level of various equipment are also getting higher and higher; therefore, various large-scale equipment and high-energy consumption equipment are more and more used in all walks of life And various environmental conditions, the proportion of the impact of the environment on the equipment in the factors affecting the life of the equipment is increasing year by year; in recent years, with the development speed of electronic products in the direction of light weight, integration, portability, Faster and faster, when electronic equipment is working under various extre...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/00H01L21/56B82Y30/00
CPCH01L23/564H01L21/56B82Y30/00
Inventor 于军胜周殿力李嘉文蒋泉
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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