Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Moisture-proof structure for optoelectronic device and preparation method of moisture-proof structure

A technology for optoelectronic devices and electronic devices, applied in the fields of electro-solid devices, semiconductor/solid-state device manufacturing, nanotechnology for materials and surface science, etc. and other problems, to achieve the effect of increasing the distribution range and quantity, avoiding environmental pollution, and increasing working life.

Inactive Publication Date: 2021-03-16
UNIV OF ELECTRONICS SCI & TECH OF CHINA
View PDF8 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Most of the most common traditional moisture-proof products on the market are based on common organic molecules, but this type of organic moisture-proof molecules has poor adhesion, low thermal decomposition temperature, and low solid content, making it difficult to form a stable and long-lasting moisture-proof film. Therefore, it is difficult to meet the requirements of existing products for moisture-proof performance. In addition, organic molecules are sensitive to ultraviolet radiation, and the structure is unstable when exposed to ultraviolet light, resulting in short moisture-proof life; at the same time, due to the porous silicon dioxide (SiO 2 ) has great advantages in structure and water resistance and has begun to be widely used in the moisture-proof industry. Various types of SiO have been used 2 The moisture-proof film made of materials has also improved the moisture-proof of electronic products
[0004] However, due to the existing SiO 2 Most of the solvents used in moisture-proof materials contain stupid, which will cause great harm to the environment and human health after volatilization. It does not meet the future requirements of the industry for green and sustainable preparation of electronic products. 2 Limitations of the film preparation process for moisture-proof materials, SiO 2 The thickness of the moisture-proof film is within a few centimeters, which is unacceptable for current integrated, portable and multi-functional electronic devices or flexible devices; at the same time, SiO 2 The film is easy to disperse unevenly during the preparation process, and it is easy to cause bad spots in the moisture-proof film. It takes a lot of money to solve this problem, which will not only increase the cost of electronic products but also reduce the yield and yield of products. efficiency; these issues have seriously restricted the SiO 2 Application and promotion of moisture-proof material film in the industrialization of optoelectronic products

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Moisture-proof structure for optoelectronic device and preparation method of moisture-proof structure
  • Moisture-proof structure for optoelectronic device and preparation method of moisture-proof structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] Such as figure 1 As shown, the moisture-proof film that can be used for optoelectronic devices has a total thickness of 15 μm, and the mixed solvent is ethylene glycol, polymer polyelectrolyte type 731 dispersant, silane coupling agent YGO-1204 and aqueous emulsion. These four components The ratio is: 1:1:1:1; the moisture-proof agent is applied by roller coating, LB film method, scraping coating, spin coating, drop coating, spray coating, pulling method, casting method, dip coating, inkjet printing, self-assembly Or have a stable film structure after screen printing treatment, a mixture of 20% weeping willow root extract and glycerin with larger contact area and green environmental protection characteristics, and the protective agent is nano-scale porous SiO with ethylene glycol as a solvent 2 particles. The ingredients are as follows:

[0036] Mixed solvent: 65%, moisture-proof agent: 25%, protective agent: 10%;

[0037] The preparation method is as follows:

[00...

Embodiment 2

[0043] Such as figure 1As shown, the moisture-proof film that can be used for optoelectronic devices has a total thickness of 15 μm, and the mixed solvent is ethylene glycol, polymer polyelectrolyte type 731 dispersant, silane coupling agent YGO-1204 and aqueous emulsion. These four components The ratio is: 1:1:1:1; the moisture-proof agent is applied by roller coating, LB film method, scraping coating, spin coating, drop coating, spray coating, pulling method, casting method, dip coating, inkjet printing, self-assembly Or have a stable film structure after screen printing treatment, a mixture of 20% weeping willow root extract and glycerin with larger contact area and green environmental protection characteristics, and the protective agent is nano-scale porous SiO with ethylene glycol as a solvent 2 particles. The ingredients are as follows:

[0044] Mixed solvent 65%, moisture-proof agent 20%, protective agent 15%;

[0045] The preparation method is as follows:

[0046] ...

Embodiment 3

[0051] Such as figure 1 As shown, the moisture-proof film that can be used for optoelectronic devices has a total thickness of 15 μm, and the mixed solvent is ethylene glycol, polymer polyelectrolyte type 731 dispersant, silane coupling agent YGO-1204 and aqueous emulsion. These four components The ratio is: 1:1:1:1; the moisture-proof agent is applied by roller coating, LB film method, scraping coating, spin coating, drop coating, spray coating, pulling method, casting method, dip coating, inkjet printing, self-assembly Or have a stable film structure after screen printing treatment, a mixture of 20% weeping willow root extract and glycerin with larger contact area and green environmental protection characteristics, and the protective agent is nano-scale porous SiO with ethylene glycol as a solvent 2 particles. The ingredients are as follows:

[0052] Mixed solvent 60%, moisture-proof agent 25%, protective agent 15%;

[0053] The preparation method is as follows:

[0054]...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
concentrationaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a moisture-proof structure capable of being used for an optoelectronic device and a preparation method of the moisture-proof structure, and belongs to the technical field of moisture-proof materials. The structure sequentially comprises an attachment surface and a moisture-proof film structure from bottom to top, and the attachment surface is the surface of a substrate or the surface of the optoelectronic device; the total thickness of the moisture-proof film structure does not exceed 15 microns; the moisture-proof film structure is formed by spraying a mixed solution of a mixed solvent, a moisture-proof agent and a protective agent; the moisture-proof film structure comprises the following components in percentage by mass: 45-65% of a mixed solvent, 25-35% of a moisture-proof agent and 10-20% of a protective agent; the preparation method of the moisture-proof structure capable of being used for the photoelectronic device comprises the following steps: cleaningthe surface of the photoelectronic device or the surface of a substrate, then respectively preparing a mixed solvent, a moisture-proof agent and a protective agent, mixing and spraying the mixed solvent, the moisture-proof agent and the protective agent to the surface of the photoelectronic device or the surface of the substrate, and then carrying out drying treatment at 80 DEG C for 5 minutes toobtain the moisture-proof film structure.

Description

technical field [0001] The invention belongs to the technical field of moisture-proof materials, and in particular relates to a moisture-proof structure applicable to optoelectronic devices and a preparation method thereof. Background technique [0002] As human society's requirements for production efficiency are getting higher and higher, the requirements for electronic equipment in terms of light weight, portability, flexibility, transparency, and integration are getting higher and higher; as electronic products are light, portable, and multi- The degree of development in the direction of function is getting higher and higher. Under various environmental conditions, the materials, parts and components used in electronic equipment can have environmental effects, which will reduce the reliability and life of the equipment; The degree of integration, high-density assembly and microelectronics is getting higher and higher, as well as the amplification characteristics of elect...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/00H01L21/56B82Y30/00
CPCH01L23/564H01L21/56B82Y30/00
Inventor 于军胜周殿力侯思辉杨根杰
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com