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LED chip structure of inverted double-layer DBR and manufacturing method thereof

A technology of LED chip and chip structure, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of reducing the overall stress of the chip structure, high stress, and difficult cutting, so as to reduce the difficulty of cutting, prevent warping, and improve the quality of products rate effect

Pending Publication Date: 2021-03-16
普瑞(无锡)研发有限公司
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Problems solved by technology

[0003] In view of the problems that the double-sided DBR structure used in the above-mentioned prior art has excessive stress, high cutting difficulty, and the need to improve the manufacturing method, the applicant provides a flip-chip double-layer DBR LED chip structure with a reasonable structure and its fabrication Method, by setting dicing lines on the DBR reflective layer, the DBR reflective layer is divided into several small blocks, reducing the overall stress of the chip structure, preventing the chip structure from warping, and not containing DBR in the dicing line area, reducing the cutting difficulty of the chip , thereby improving the yield rate of chip manufacturing

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  • LED chip structure of inverted double-layer DBR and manufacturing method thereof

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Embodiment Construction

[0031] The specific implementation manner of the present invention will be described below in conjunction with the accompanying drawings.

[0032] Such as figure 1 As shown, in the flip-chip double-layer DBR LED chip structure of the present invention, the LED chip epitaxial structure is grown on the chip substrate 1, and the chip substrate 1 includes but not limited to sapphire, silicon wafer, silicon carbide wafer or metal. For example, using MOCVD equipment (MOCVD, Metal-organic Chemical Vapor Deposition, Metal-Organic Compound Chemical Vapor Deposition) to grow an LED chip epitaxial structure on the chip substrate 1, the LED chip epitaxial structure is a multi-layer structure, depending on actual needs, for example, It is a buffer layer, a U-GaN layer, an N-GaN layer, a multi-quantum well layer and a P-GaN layer grown in sequence, or an N-GaN layer, a multi-quantum well layer and a P-GaN layer grown in sequence, and the The LED chip epitaxial structure covers the entire s...

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Abstract

The invention discloses an LED chip structure of an inverted double-layer DBR and a manufacturing method thereof. The LED chip structure of the inverted double-layer DBR comprises an LED chip epitaxial structure which grows on the front surface of a chip substrate, and an ITO film is plated on the surface of the epitaxial structure; N and P metal conductive branch lines are measured on the chip structure; a SiO2 insulating layer is deposited on the front surface of the chip structure, a first DBR reflecting layer is plated on the surface of the SiO2 insulating layer, N and P metal conductive branch lines are exposed through an ICP etching technology, and N and P bonding pad electrodes are manufactured at corresponding positions; a second DBR reflecting layer is plated on the back surface of the chip structure; and when the chip structure is not cut, a cutting channel is formed on the chip structure through an etching technology, and the chip is cut along the cutting channel. Accordingto the invention, the DBR reflecting layer is divided into a plurality of small blocks by arranging the cutting channels on the DBR reflecting layer, so that the overall stress of the chip structure is reduced, and the chip structure is prevented from warping.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a flip-chip double-layer DBR LED chip structure and a manufacturing method thereof. Background technique [0002] Light-emitting diode (LED) is a solid-state light-emitting device that converts electrical energy into light energy. Among them, GaN-based LED chips have been greatly developed and applied. The luminous efficiency of light-emitting diodes mainly has two factors: the internal quantum efficiency and external quantum efficiency of the device. Due to the existence of Fresnel loss, total reflection loss and material absorption loss, the light extraction efficiency of the LED chip is reduced. Light extraction efficiency refers to the proportion of photons emitted into the air to the photons generated by electron-hole pairs in the active area of ​​the chip through radiative recombination, which is mainly related to the geometric structure of the LED and the optical p...

Claims

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Application Information

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IPC IPC(8): H01L33/46H01L33/00
CPCH01L33/007H01L33/0095H01L33/46
Inventor 张秀敏
Owner 普瑞(无锡)研发有限公司
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