A hybrid matrix SICF/SIC composite material and its preparation method
A composite material and matrix technology, applied in the field of hybrid matrix SiCf/SiC composite materials and its preparation, can solve the problems of high cost, high porosity, and low mechanical properties
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Embodiment 1
[0037] A method for preparing a SiCf / SiC composite material mixed with a SiC matrix, comprising the following steps:
[0038] (1) The 2.5D woven SiC fiber preform (fiber volume fraction is 45%) was removed at 800°C for 0.5 hours under an inert atmosphere, and a PyC interface layer was deposited on the surface. The thickness of the interface layer was about 200~300 nm .
[0039] (2) Bring the above-mentioned prefabricated part of the deposited interface layer into the reaction furnace cavity by bubbling trichloromethylsilane (MTS) with hydrogen in the SiC deposition furnace. The flow rates of Ar and Ar are 300 mL / min and 200 mL / min respectively, the reaction temperature is controlled at 1075 ° C, and the pressure of the reaction furnace chamber is 1400 Pa. After deposition for 50 to 55 hours, an intermediate deposited with a CVI SiC substrate is obtained. The density of the intermediate is 2.006g / cm 3 .
[0040] (3) Vacuum impregnate the above intermediate with a xylene solu...
Embodiment 2
[0043] A method for preparing a SiCf / SiC composite material mixed with a SiC matrix, comprising the following steps:
[0044] (1) The three-dimensional four-way braided SiC fiber preform (fiber volume fraction is 50%) is degummed at 700°C under an inert atmosphere for 0.5 hours, and a PyC interface layer is deposited on its surface. The thickness of the interface layer is about 200~300 nm.
[0045] (2) Bring the above-mentioned prefabricated part of the deposited interface layer into the reaction furnace cavity by bubbling trichloromethylsilane (MTS) with hydrogen in the SiC deposition furnace. The flow rates of Ar and Ar are 280 mL / min and 190 mL / min respectively, the reaction temperature is controlled at 1070 ° C, and the pressure of the reaction furnace chamber is 1300 Pa. After deposition for 48 to 50 hours, an intermediate deposited with a CVI SiC substrate is obtained. The density of the intermediate is 1.98g / cm 3 .
[0046] (3) Vacuum impregnate the above intermediat...
Embodiment 3
[0049] A method for preparing a SiCf / SiC composite material mixed with a SiC matrix, comprising the following steps:
[0050] (1) The 2.5D braided SiC fiber preform (fiber volume fraction 40%) was degummed at 800°C for 0.5 hours under an inert atmosphere, and a BN interface layer was deposited on the surface. The thickness of the interface layer was about 200~300 nm .
[0051] (2) Bring the above-mentioned prefabricated part of the deposited interface layer into the reaction furnace cavity by bubbling trichloromethylsilane (MTS) with hydrogen in the SiC deposition furnace. The flow rates of Ar and Ar are 320 mL / min and 210 mL / min respectively, the reaction temperature is controlled at 1080 ° C, and the pressure of the reaction chamber is 1500 Pa. After deposition for 50 to 60 hours, an intermediate deposited with a CVI SiC substrate is obtained. The density of the intermediate is 2.1g / cm 3 .
[0052] (3) Vacuum impregnate the above-mentioned intermediate in a xylene solutio...
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