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Preparation method of Bi2O2SiO3-Si2Bi24O40-BiOX double-heterojunction composite photocatalyst

A double-heterojunction and recombination light technology, applied in the field of materials, can solve the problems of insufficient response wavelength range and limit the large-scale application of bismuth-based photocatalysts, and achieve the effects of improving photocatalytic performance, easy control, and high purity

Inactive Publication Date: 2021-03-23
SHAANXI UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, most single bismuth-based oxide semiconductor photocatalysts are prone to recombination of photogenerated electrons and holes, and the band gap is too wide or too narrow, which makes the response wavelength range insufficient, which greatly limits the bismuth-based photocatalysts. Large-scale applications of photocatalysts

Method used

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  • Preparation method of Bi2O2SiO3-Si2Bi24O40-BiOX double-heterojunction composite photocatalyst
  • Preparation method of Bi2O2SiO3-Si2Bi24O40-BiOX double-heterojunction composite photocatalyst

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] (1) Dissolve a certain amount of bismuth nitrate in deionized water (concentration control is 0.6mmol / L) by stirring for 15min, and add a certain amount of polyethylene glycol 400 (volume ratio of it to bismuth nitrate solution) in the stirring process 1:1), the resulting solution is recorded as liquid A; at the same time, a certain amount of sodium metasilicate nonahydrate (n Bi / Si =(1:1) was dissolved in deionized water by stirring for 15 min, and the resulting solution was designated as liquid B. Slowly add liquid B into liquid A dropwise, and continue to stir for about 30 minutes until the solution presents a uniform white emulsion, that is, the precursor solution is obtained.

[0026] (2) The precursor solution was reacted at 180°C for 12h, then naturally cooled to room temperature, the obtained samples were collected and washed alternately with deionized water and absolute ethanol three times each, and then dried at 80°C for 12h to obtain BSO powder body.

[002...

Embodiment 2

[0032] (1) Dissolve a certain amount of bismuth nitrate in deionized water (concentration control is 0.6mmol / L) by stirring for 15min, and add a certain amount of polyethylene glycol 400 (volume ratio of it to bismuth nitrate solution) in the stirring process 1:1), the resulting solution is recorded as liquid A; at the same time, a certain amount of sodium metasilicate nonahydrate (nBi / Si =(1:1) was dissolved in deionized water by stirring for 15 min, and the resulting solution was designated as liquid B. Slowly add liquid B into liquid A dropwise, and continue to stir for about 30 minutes until the solution presents a uniform white emulsion, that is, the precursor solution is obtained.

[0033] (2) The precursor solution was reacted at 180°C for 12h, then naturally cooled to room temperature, the obtained samples were collected and washed alternately with deionized water and absolute ethanol three times each, and then dried at 80°C for 12h to obtain BSO powder body.

[0034]...

Embodiment 3

[0039] (1) Dissolve a certain amount of bismuth nitrate in deionized water (concentration control is 0.6mmol / L) by stirring for 15min, and add a certain amount of polyethylene glycol 400 (volume ratio of it to bismuth nitrate solution) in the stirring process 1:1), the resulting solution is recorded as liquid A; at the same time, a certain amount of sodium metasilicate nonahydrate (n Bi / Si =(1:1) was dissolved in deionized water by stirring for 15 min, and the resulting solution was designated as liquid B. Slowly add liquid B into liquid A dropwise, and continue to stir for about 30 minutes until the solution presents a uniform white emulsion, that is, the precursor solution is obtained.

[0040] (2) The precursor solution was reacted at 180°C for 12h, then naturally cooled to room temperature, the obtained samples were collected and washed alternately with deionized water and absolute ethanol three times each, and then dried at 80°C for 12h to obtain BSO powder body.

[004...

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Abstract

The invention relates to a preparation method of a Bi2O2SiO3-Si2Bi24O40-BiOX double-heterojunction composite photocatalyst. X is two of Cl, Br and I. The preparation method comprises the following steps of by taking bismuth nitrate as a bismuth source, sodium metasilicate nonahydrate as a silicon source, absolute ethyl alcohol and deionized water as solvents and polyethylene glycol 400 or ethyleneglycol and the like as a dispersing agent, carrying out hydrothermal reaction for 11-13 hours, and compounding the obtained composite material powder with NaX (X=Cl, Br, I). According to the method,high-temperature sintering is not needed, the process is simple, the particle size of the product is easy to control, the synthesized product is high in crystallinity, high in purity and free of agglomeration, and the obtained composite material powder shows high photocatalytic performance due to the synergistic effect of double heterojunctions.

Description

technical field [0001] The invention belongs to the technical field of materials, in particular to a Bi 2 o 2 SiO 3 -Si 2 Bi 24 o 40 -Preparation method of BiOX double heterojunction composite photocatalyst. Background technique [0002] Bismuth-based semiconductor photocatalysts can be excited by visible light, have relatively good photocatalytic activity, and can effectively degrade organic pollutants under visible light, so they have good development prospects. However, most single bismuth-based oxide semiconductor photocatalysts are prone to recombination of photogenerated electrons and holes, and the band gap is too wide or too narrow, which makes the response wavelength range insufficient, which greatly limits the bismuth-based photocatalysts. Large-scale applications of photocatalysts. Contents of the invention [0003] In order to overcome the shortcoming of above-mentioned prior art, the object of the present invention is to provide a kind of Bi 2 o 2 SiO...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B01J27/06B01J37/10B01J37/06B01J37/34C02F1/30C02F101/38C02F101/34C02F101/36C01G29/00C01B33/20C01B33/00
CPCB01J27/06B01J37/10B01J37/06B01J37/343C02F1/30C01G29/006C01B33/20C01B33/00C02F2101/38C02F2101/34C02F2101/36C01P2004/80B01J35/39
Inventor 伍媛婷刘秋君韩琳曾柏林
Owner SHAANXI UNIV OF SCI & TECH
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