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Infrared long-wave cut-off filter and preparation method thereof

A cut-off filter, long-wave technology, applied in the direction of filters, optics, optical components, etc., can solve the problems of less variety of infrared film materials and difficult preparation.

Active Publication Date: 2021-04-02
LUOYANG INST OF ELECTRO OPTICAL EQUIP OF AVIC
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

Infrared long-wave cut-off filters have extremely high requirements on the thickness of each film layer, the firmness of the film layer, and the optical properties. However, there are very few infrared film materials to choose from at present, and there is still a problem of difficulty in preparation.

Method used

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  • Infrared long-wave cut-off filter and preparation method thereof

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Embodiment

[0052] An infrared long-wave cut-off filter, the film structure of the filter is:

[0053] MLMHM|Sub|(MH)^11M

[0054] Among them, Sub is the substrate, (MH)^11M is the short-wave pass filter film system, MLMHM is the anti-reflection film system, H is the Ge film layer, M is the ZnS film layer, and L is the YbF film 3 film layer.

[0055] The substrate is a Ge substrate.

[0056] A preparation method of an infrared long-wave cut-off filter, comprising the steps of:

[0057] Step 1: Coating an anti-reflection film system on one side of the germanium substrate;

[0058] Step 1.1: Clean the substrate and bombard it with an ion source for 3 to 5 minutes;

[0059] Step 1.2: Bake the substrate and evacuate to 1×10 -3 Pa, heat the substrate to 120°C and keep it warm for 1 hour;

[0060] Step 1.3: Plating the first layer of film, using ZnS film material for evaporation, and using ion source to assist deposition, the pressure of the vacuum chamber during evaporation is 5×10 -3 P...

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Abstract

The invention provides an infrared long-wave cut-off filter and a preparation method thereof, and a film system structure of the infrared long-wave cut-off filter is MLMHM|Sub|(MH)<^>11M, Sub is a substrate, (MH)<^>11M is a short-wave pass filter film system, MLMHM is an antireflection film system, H is a Ge film layer, M is a ZnS film layer, and L is a YbF3 film layer. The infrared long-wave filter is high in transmittance, accurate in cut-off position, good in chemical stability and high in environmental adaptability, the cut-off depth is smaller than 0.01, the infrared long-wave cut-off optical filter can be widely applied to an infrared detection optical system, the infrared long-wave cut-off optical filter manufactured through the method is cut off in the 9.6-11 micron waveband, and the average transmittance T of the 7.5-9.0 micron waveband is larger than or equal to 95%. The environmental adaptability of the infrared long-wave cut-off filter meets the national military standard of optical films.

Description

technical field [0001] The invention relates to the technical field of thin film manufacturing of optical parts, in particular to an optical filter and a preparation method. Background technique [0002] From the perspective of optical film, the filter has high transmittance for a certain wavelength band, while cutting off the rest of the wavelength band. Infrared long-wave cut-off filter has high transmittance to short-wave infrared and high cut-off of long-wave infrared. Infrared long-wave cut-off filters are mainly used in infrared multi-spectral detection systems, which can filter out background clutter, and are of great significance for improving the signal-to-noise ratio of infrared optical systems and improving product performance. Infrared long-wave cut-off filters have extremely high requirements on the thickness of each film layer, the firmness of the film layer, and the optical properties. However, there are very few infrared film materials to choose from at pres...

Claims

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Application Information

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IPC IPC(8): G02B5/20C23C14/54C23C14/24C23C14/16C23C14/06
CPCG02B5/201G02B5/208C23C14/24C23C14/546C23C14/0629C23C14/16C23C14/0694
Inventor 许琎展亚鸽李鹏蔡庄波
Owner LUOYANG INST OF ELECTRO OPTICAL EQUIP OF AVIC
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