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Workpiece processing using deposition process and etching process

A technology of deposition process and workpiece, applied in metal material coating process, electrical components, semiconductor/solid-state device manufacturing, etc., can solve the problem that charged substances cannot pass through

Inactive Publication Date: 2021-04-02
베이징이타운세미컨덕터테크놀로지컴퍼니리미티드 +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The barrier is permeable to neutral species but impermeable to charged species from the plasma

Method used

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  • Workpiece processing using deposition process and etching process
  • Workpiece processing using deposition process and etching process
  • Workpiece processing using deposition process and etching process

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0080] Process gas: CF 4 , CH 4 , O 2 , N 2

[0081] Diluent gas: He or Ar

[0082] Process pressure: about 100-800mTorr

[0083] Inductively coupled plasma source power: about 1000-2500W

[0084] Workpiece temperature: about 10-40°C

[0085] Process cycle (time): about 10-30 seconds

[0086] Gas flow rate of process gas:

[0087] Gas 1: about 20sccm to about 200sccm

[0088] Gas 2: about 20sccm to about 200sccm

[0089] Gas 3: about 500sccm to about 1500sccm

[0090] Gas 4: about 100 sccm to about 500 sccm

[0091] Diluent gas: about 0sccm to about 1000sccm

example 2

[0093] Process gas: CF 4 , C 2 f 4 , CHF 3 , H 2

[0094] Diluent gas: He or Ar

[0095] Process pressure: about 4-100mTorr

[0096] Inductively coupled plasma source power: about 1000-2500W

[0097] Workpiece temperature: about 10-40°C

[0098] Process cycle (time): about 10-30s

[0099] Gas flow rate of process gas:

[0100] Gas 1: about 0 sccm to about 200 sccm

[0101] Gas 2: about 0sccm to about 200sccm

[0102] Gas 3: about 0 sccm to about 200 sccm

[0103] Gas 4: about 0sccm to about 300sccm

[0104] Diluent gas: about 0sccm to about 1000sccm

[0105] Exemplary process parameters for the etching process will now be set forth.

example 3

[0107] Process gas: CF 4 , H 2 , O 2 , N 2

[0108] Diluent gas: He or Ar

[0109] Process pressure: about 500-950mTorr

[0110] Inductively coupled plasma source power: about 1000-2500W

[0111] Workpiece temperature: about 10-40°C

[0112] Process cycle (time): about 10-60 seconds

[0113] Gas flow rate of process gas:

[0114] Gas 1: about 50sccm to about 400sccm

[0115] Gas 2: about 20sccm to about 200sccm

[0116] Gas 3: about 500sccm to about 2000sccm

[0117] Gas 4: about 100 sccm to about 500 sccm

[0118] Diluent gas: about 0sccm to about 1000sccm

[0119] Figure 8 A selective etch rate of silicon nitride compared to a silicon dioxide layer and a silicon layer which have been respectively coated with a passivation layer according to an exemplary aspect of the present disclosure is illustrated. actually as Figure 8 As shown, the selectivity of silicon nitride is greater than 1,000 compared to a layer of silicon dioxide coated in a patterned structure ...

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Abstract

An apparatus, system, and method for performing an etch removal process on a workpiece are provided. The method may include generating a plasma from a deposition process gas in a plasma chamber usinga plasma source to deposit a passivation layer on certain layers of a high aspect ratio structure. The method may include generating a plasma from an etch process gas in a plasma chamber using a plasma source to remove certain layers from the high aspect ratio structure. The method may include removing the silicon nitride layer at a faster etch rate than the silicon dioxide layer on the high aspect ratio structure.

Description

[0001] priority statement [0002] This application claims the benefit of priority to U.S. Provisional Application Serial No. 62 / 875,104, entitled "Processing Of Workpieces Using Deposition Process and Etch Process," filed July 17, 2019 , which is incorporated herein by reference for all purposes. This application claims Serial No. 62 / 990,752 entitled "Selective SiN Lateral Recess With Byproduct-Enabled Vertical Loading Control," filed March 17, 2020 , which is incorporated herein by reference for all purposes. This application claims serial number 63 / 002,488, which is hereby incorporated by reference for all purposes. technical field [0003] The present disclosure generally relates to apparatus, systems and methods for processing workpieces using plasma sources. Background technique [0004] Plasma processing is widely used in the semiconductor industry for the deposition, etching, photoresist removal, and related processing of semiconductor wafers and other substrate...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/311H01J37/32C23C16/40C23C16/34C23C16/50
CPCH01L21/31116C23C16/402C23C16/345C23C16/50H01L21/31144H01J2237/3327H01L21/3065H01L21/0217
Inventor 王善禹C·闫仲華杨晓晅宋采文张祺
Owner 베이징이타운세미컨덕터테크놀로지컴퍼니리미티드