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Method for improving defects of LCOS process

A process defect and process technology, applied in the field of improving LCOS process defects, can solve problems affecting reflection effects, etc., achieve the effect of reducing the number of defects and preventing the diffusion of copper ions

Pending Publication Date: 2021-04-13
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The top layer copper board cannot be used for direct leakage like the aluminum board (Alpad), and a thin film protective layer needs to be deposited, which will cause hillock defects on the surface of the copper board (Cu pad), which will affect the reflection effect

Method used

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  • Method for improving defects of LCOS process
  • Method for improving defects of LCOS process
  • Method for improving defects of LCOS process

Examples

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Embodiment 1

[0033] The invention provides a method for improving LCOS process defects, such as image 3 as shown, image 3 Shown as the method for improving LCOS process defects of the present invention, the method at least includes the following steps:

[0034] Step 1, providing a pixel region and a logic region for the LCOS process, the pixel region and the logic region are adjacent to each other; and the pixel region is provided with a top layer copper exposed on the upper surface; as figure 2 as shown, figure 2 It is shown as a structural schematic diagram of the pixel area and logic area in the present invention; figure 2 In the LCOS (micro-display on silicon) process, the pixel area and the logic area are separated from each other by a vertical dotted line, and the pixel area (pixel) and the logic area (logic) are adjacent to each other; and the pixel area (pixel) ) has a top layer of copper 00 exposed on the upper surface;

[0035] Further in the present invention, the thick...

Embodiment 2

[0047] The present invention provides a method for improving LCOS process defects. The difference between this embodiment and Embodiment 1 is that the protective layer in step 2 of this embodiment is an NDC (nitrogen-doped silicon carbide film) layer, and at the same time The protective layer in step five of this embodiment is an NDC (nitrogen-doped silicon carbide film) layer.

Embodiment 3

[0049] The present invention provides a method for improving LCOS process defects. The protective layer in step 2 of this embodiment is a silicon nitride layer or an NDC (nitrogen-doped silicon carbide film) layer. At the same time, the protective layer in step five of this embodiment is a silicon nitride layer or an NDC (nitrogen-doped silicon carbide film) layer.

[0050] To sum up, the present invention releases the stress on the copper surface and then deposits a protective layer to prevent the diffusion of copper ions without adding a mask. After the process is optimized, the number of defects on the copper surface is significantly reduced. Therefore, the present invention effectively overcomes various shortcomings in the prior art and has high industrial application value.

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Abstract

The invention provides a method for improving defects of an LCOS process, which comprises the following steps of providing a pixel region and a logic region for the LCOS process, and arranging top-layer copper with an exposed upper surface in the pixel region, depositing a protective layer on the upper surface of the top-layer copper, so that hill-shaped bulges are generated on the upper surface of the top-layer copper to release the stress on the surface of the top-layer copper, etching to remove the protective layer, flattening the upper surface of the top-layer copper to remove the hill-shaped bulges, and depositing a protective layer on the upper surface of the flattened top copper again. Under the condition that a photomask is not added, the stress on the copper surface is released firstly, then the protective layer is deposited again to prevent copper ions from diffusing, and after the technological process is optimized, the number of defects on the copper surface is remarkably reduced.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for improving LCOS process defects. Background technique [0002] The new reflective MICRO LCD projection technology, its structure is on the silicon wafer, using the semiconductor process to make the driving panel, and then grinding the transistor on the crystal, and plating aluminum as a mirror to form a CMOS substrate, and then the CMOS The substrate is bonded to the glass substrate containing the transparent electrodes, and then liquid crystal is injected for packaging and testing. [0003] At present, silicon-based micro-display (LCOS) chips mainly adopt 90nm-0.13um Al interconnection process on the market, and the application of 55nm Cu interconnection process is still under development. [0004] LCOS is applied to the 55nm Cu interconnection process, and it is necessary to develop a "pixel (pixel)" area passivation etch process so that the top layer copper...

Claims

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Application Information

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IPC IPC(8): H01L21/02H01L21/321G02F1/1362
CPCH01L21/0217H01L21/02167H01L21/32115G02F1/136277
Inventor 何亮亮梁成栋
Owner SHANGHAI HUALI MICROELECTRONICS CORP
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