AlGaN/GaN transistor with high electron mobility and manufacturing method thereof
A high electron mobility, transistor technology, used in semiconductor/solid state device manufacturing, circuits, electrical components, etc., to achieve good uniformity, reduced dislocation density and growth time, and small warpage.
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Embodiment 1
[0126] Such as Picture 1-1 , Figure 1-2 , Figure 1-3 , Figure 1-4 , Figure 1-5 , Figure 1-6 , Figure 1-7 , Figure 1-8 Shown is an AlGaN / GaN high electron mobility transistor with discrete epitaxial layers of the present invention, including a silicon substrate 101, an AlGaN / GaN epitaxial layer 200, a first insulating layer 301, a source 302, a drain 303, and a gate 304, passivation layer 407, second insulating layer 408, source interconnection layer 401, drain interconnection layer 402, gate interconnection layer 403, source pad 404, drain pad 405 and gate pad 406, characterized in that: the AlGaN / GaN epitaxial layer 200 is set up on the silicon substrate 101, and is composed of mutually independent discrete AlGaN / GaN epitaxial units 201, and the discrete AlGaN / GaN epitaxial units 201 are arranged on the silicon substrate 101 m rows and n columns, the column gap width is S1, the row gap width is S2, the dimension of the discrete AlGaN / GaN epitaxial unit 201 along...
Embodiment 2
[0160] Such as Figure 6-1 , Figure 6-2 , Figure 6-3 , Figure 6-4 , Figure 6-5 , Figure 6-6Shown is an AlGaN / GaN high electron mobility transistor with discrete epitaxial layers of the present invention, including a silicon substrate 101, an AlGaN / GaN epitaxial layer 200, a first insulating layer 301, a source 302, a drain 303, and a gate 304, drain back electrode 305, passivation layer 407, second insulating layer 408, source interconnection layer 401, gate interconnection layer 403, source pad 404 and gate pad 406, characterized by: The AlGaN / GaN epitaxial layer 200 is set up on the silicon substrate 101, and is composed of mutually independent discrete AlGaN / GaN epitaxial units 201, and the discrete AlGaN / GaN epitaxial units 201 are arranged on the silicon substrate 101 in m rows and n columns. The gap width is S1, the row gap width is S2, the dimension of the discrete AlGaN / GaN epitaxial unit 201 along the column direction is L, and the dimension along the row di...
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