A kind of algan/gan high electron mobility transistor and its manufacturing method
A technology with high electron mobility and manufacturing method, applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., to achieve good uniformity, reduced stress accumulation, and small warpage.
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Embodiment 1
[0126] like Picture 1-1 , Figure 1-2 , Figure 1-3 , Figure 1-4 , Figure 1-5 , Figure 1-6 , Figure 1-7 , Figure 1-8 Shown is an AlGaN / GaN high electron mobility transistor with discrete epitaxial layers of the present invention, including a silicon substrate 101, an AlGaN / GaN epitaxial layer 200, a first insulating layer 301, a source electrode 302, a drain electrode 303, a gate electrode 304, passivation layer 407, second insulating layer 408, source interconnect layer 401, drain interconnect layer 402, gate interconnect layer 403, source pad 404, drain pad 405 and gate pad 406 , characterized in that: the AlGaN / GaN epitaxial layer 200 is established on the silicon substrate 101 , and consists of discrete AlGaN / GaN epitaxial units 201 that are independent of each other, and the discrete AlGaN / GaN epitaxial units 201 are arranged on the silicon substrate 101 In m rows and n columns, the column gap width is S1, the row gap width is S2, the size of the discrete AlGa...
Embodiment 2
[0160] like Figure 6-1 , Figure 6-2 , Figure 6-3 , Figure 6-4 , Figure 6-5 , Figure 6-6Shown is an AlGaN / GaN high electron mobility transistor with discrete epitaxial layers of the present invention, including a silicon substrate 101, an AlGaN / GaN epitaxial layer 200, a first insulating layer 301, a source electrode 302, a drain electrode 303, a gate electrode 304, drain back electrode 305, passivation layer 407, second insulating layer 408, source interconnect layer 401, gate interconnect layer 403, source pad 404 and gate pad 406, characterized by: the The AlGaN / GaN epitaxial layer 200 is established on the silicon substrate 101 and is composed of discrete AlGaN / GaN epitaxial units 201 that are independent of each other. The discrete AlGaN / GaN epitaxial units 201 are arranged on the silicon substrate 101 in m rows and n columns. The gap width is S1, the row gap width is S2, the size of the discrete AlGaN / GaN epitaxial unit 201 along the column direction is L, and ...
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