Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method of composite substrate, composite substrate and composite film

A composite substrate and composite film technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, electrical solid-state devices, etc., can solve problems such as increasing the risk of debonding of radio frequency filters, reducing the service life of radio frequency filters, and falling off functional films. , to reduce the risk of debonding, prolong the service life, and avoid falling off.

Active Publication Date: 2021-04-23
JINAN JINGZHENG ELECTRONICS
View PDF8 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] This application provides a method for preparing a composite substrate, a composite substrate, and a composite film to solve the problem that in the prior art, during the cutting process, the composite film is easily debonded at the interface with poor bonding force, causing the functional film to fall off and affecting this area. In addition, the weak binding force will also increase the risk of debonding during the use of RF filters and reduce the service life of RF filters

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of composite substrate, composite substrate and composite film
  • Preparation method of composite substrate, composite substrate and composite film
  • Preparation method of composite substrate, composite substrate and composite film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0026] The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only some of the embodiments of the present application, not all of them. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of this application.

[0027] As mentioned in the background technology of this application, in the prior art, the volume of the radio frequency filter is relatively small, and the cutting size of the lithium tantalate thin film wafer needs to be smaller. Therefore, the bonding force between the layers of the lithium tantalate thin film wafer is It becomes a key factor in the utilization rate of lithium tantalate film and the yield of devices. If the adhesion of polysilicon depos...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Lengthaaaaaaaaaa
Login to View More

Abstract

The invention provides a preparation method of a composite substrate, the composite substrate and a composite film. The preparation method of the composite substrate comprises the following steps of: cleaning a monocrystalline silicon substrate to obtain a monocrystalline silicon substrate layer with a clean surface; growing polycrystalline silicon on the clean surface of the monocrystalline silicon substrate layer, and executing a planarization process to form a first polycrystalline silicon layer; and focusing laser on the side surface, close to the monocrystalline silicon substrate layer, of the first polycrystalline silicon layer until a monocrystalline silicon fusion layer is formed, and stopping laser focusing to obtain a composite substrate. The composite substrate sequentially comprises a monocrystalline silicon substrate layer, a monocrystalline silicon fusion layer and a second polycrystalline silicon layer from bottom to top. By adopting the scheme, the position, the distribution and the size of a monocrystalline silicon fusion region are accurately controlled by adjusting the power, the focal length and the position of the laser, so that the bonding force of a target region at a target interface can be improved according to the actual conditions of the monocrystalline silicon substrate layer and the polycrystalline silicon layer, and the deposition adhesion of polycrystalline silicon on the silicon substrate is improved.

Description

technical field [0001] The present application relates to the field of semiconductor technology, in particular to a method for preparing a composite substrate, a composite substrate and a composite thin film. Background technique [0002] RF filters are widely used in the transceiver links of wireless communication terminals, allowing signals of specific frequencies or frequency bands to pass through while filtering out unwanted interference or spurious signals. RF filters mainly include surface acoustic wave filter (SAWFilter) and bulk acoustic wave filter (BAW Filter), whose frequency ranges from 800 to 2500MHz. Among them, the energy of the surface acoustic wave in the surface acoustic wave filter is focused on the surface of the substrate, so that the wave propagates without loss on the substrate. By simultaneously controlling the linear expansion coefficient of the substrate and the speed of sound to reduce the frequency temperature coefficient, the electrode generates ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L21/20H01L23/14
CPCH01L21/20H01L23/14
Inventor 李洋洋李真宇杨超胡卉刘阿龙连坤
Owner JINAN JINGZHENG ELECTRONICS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products