Diamond-like carbon protective film and preparation method thereof

Abstract

The invention discloses a diamond-like carbon protective film and a preparation method thereof. The diamond-like carbon protective film sequentially comprises a micro-nano electronic device base material, an insulating layer belt, an internal stress buffer layer and a wear-resistant layer belt from bottom to top, wherein the lowermost layer of the insulating layer belt is a silicon-containing thin layer, then undoped DLC layers and silicon-containing thin layers are sequentially and alternately distributed, the internal stress buffer layer sequentially comprises an H-W:DLC layer, an M-W:DLC layer and an L-W:DLC layer from bottom to top, metal layers II and S-W:DLC layers are sequentially and alternately distributed on the uppermost layer of the internal stress buffer layer, and the diamond-like protective film. The plating layer can be obtained through sequential plating by adopting a physical vapor deposition method including PLD, and the prepared diamond-like carbon film has the characteristics of insulation, heat conduction and wear resistance by adopting tungsten-doped DLC layers with different concentrations and tungsten-doped DLC layers with micro concentrations in the preparation process. The use requirements and the miniaturization development direction of electronic devices can be met, and the application prospect is wide.

Description

technical field [0001] The invention belongs to the technical field of thin film materials, and in particular relates to a diamond-like protective film and a preparation method thereof. Background technique [0002] Miniaturization has always been a key direction in the development of micro-nano electronic devices. On the one hand, the normal operation of electronic devices has corresponding requirements for heat dissipation and insulation; on the other hand, the thermal conductivity of the device material itself is low (the thermal conductivity of semiconductor and ceramic materials is generally only 0.1-10W m -1 ·K -1 ), closed or semi-closed devices, densely arranged devices and other factors restrict the heat dissipation of devices; therefore, the development of device heat dissipation technology has important practical significance for the miniaturization of electronic devices and the improvement of device working efficiency. Many scholars have conducted research on m...

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Problems solved by technology

However, the thickness of the functional materials involved in the above-mentioned publications is too large when used, generally reaching more than 100 μm or even millimeter level, which is equivalent to or even exceeds the size of micro-nano electronic devices, which

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