Unlock instant, AI-driven research and patent intelligence for your innovation.

A silicon carbide powder feeding method, device and application

A silicon carbide powder and feeding device technology, which is applied in chemical instruments and methods, polycrystalline material growth, single crystal growth, etc., can solve the problems of poor quality and yield of silicon carbide crystals, and achieve the reduction of nitrogen content and growth quality High, isolation adsorption effect

Active Publication Date: 2022-04-08
SICC CO LTD
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] At present, the filling process in the preparation of silicon carbide crystals is manually operated, and a certain amount of silicon carbide raw material is manually filled in the crucible; the whole filling process is exposed to the air, and nitrogen gas is adsorbed in the crucible or silicon carbide raw material, and the produced Poor crystal quality and yield of silicon carbide crystals

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A silicon carbide powder feeding method, device and application
  • A silicon carbide powder feeding method, device and application
  • A silicon carbide powder feeding method, device and application

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0057] refer to Figure 1-2 , this embodiment provides a silicon carbide powder feeding device, the device includes a feeding chamber 1, an air inlet is opened on the feeding chamber 1, and a protective gas pipeline is connected to the air inlet; The feeding channel 2, the feeding channel 2 runs through the top of the feeding cavity 1 and extends to the inside of the feeding cavity 1. The protective gas is introduced into the feeding chamber 1 through the air inlet, so that the feeding process is carried out under the atmosphere of the protective gas, which effectively reduces the entry of nitrogen into the silicon carbide powder, and can isolate the adsorption of nitrogen in the crucible or silicon carbide raw materials. The nitrogen gas in the crucible or the silicon carbide raw material is effectively reduced, and the quality of the crystal is improved.

[0058] Specifically, the shape and size of the feed channel 2 are not specifically limited, as long as the silicon carb...

Embodiment 2

[0068] This embodiment provides a method for feeding using the device described in Embodiment 1, the method comprising the following steps:

[0069] (1) Vacuumize the feeding device so that the vacuum degree in the feeding device is less than 10 -3 mbar; Specifically, start the mechanical pump to suck away the air in the feeding device (including the preparation area, work area and assembly area), and stop the mechanical pump; then the protective gas enters the feeding device through the protective gas pipeline, and the protective gas is selected from hydrogen, At least one of helium, neon and argon; preferably, the protective gas is selected from argon or helium; the protective gas is not less than 99.999%, so that the protective gas circulates in the feeding device, the The flow rate of protective gas circulation is 30-400mL / min;

[0070] Control the pressure in the feeding device to be 1.0×10 2 Pa~1.1×10 5 Pa; preferably, the pressure in the control feeding device is 1.0...

Embodiment 3

[0080] A method for growing a silicon carbide crystal, specifically comprising the following steps:

[0081] (1) Filling stage: use the methods of Examples 1 to 6 and Comparative Examples 1 to 5 to fill the crucible, respectively, to obtain filled crucibles 1#-6# and filled crucibles 1#-5#;

[0082] (2) Assembling stage: place the filled crucibles 1#-6# and the filled crucibles 1#-5# in the furnace body of the crystal growth furnace respectively;

[0083] (3) Impurity removal stage: use heating device to heat, control the temperature in the furnace body to 700-1100°C, pass inert gas for cleaning, the flow rate of inert gas is 50-500ml / min, and control the pressure in the furnace body to 2kPa-8kPa , hold time 10 ~ 40min;

[0084] (4) Crystal growth stage: control the pressure of the furnace body to 10kPa-50kPa, the temperature to 2000-2400°C, and the time to 50-200h; specifically, control the furnace body pressure to 20kPa, the temperature to 2200°C, and the time to 80h;

[008...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a silicon carbide powder feeding method and device, the method comprising the following steps: (1) moving the container to be filled into the feeding device; (2) feeding protective gas into the feeding device, , feed the container to be filled through the feeding channel on the feeding device; the protective gas is selected from at least one of hydrogen and inert gas; A protective gas pipeline is connected; a feeding channel is installed on the feeding cavity, and the feeding channel runs through the top of the feeding cavity and extends to the inside of the feeding cavity. By feeding the material in the feeding device with protective gas circulating, it can effectively isolate the nitrogen in the air from being adsorbed in the crucible or silicon carbide raw material, and by optimizing the parameters such as the flow rate of the protective gas, the nitrogen in the silicon carbide powder can be fully removed. , the nitrogen content of the obtained silicon carbide crystal is effectively reduced, the obtained crystal has few defects such as dislocations and polytypes, and the crystal growth quality is high.

Description

technical field [0001] The invention relates to a silicon carbide powder feeding method, device and application, and belongs to the technical field of silicon carbide crystal preparation equipment. Background technique [0002] Silicon carbide crystals have attracted widespread attention due to their excellent semi-insulating properties, especially for high-power semiconductor devices with special needs. Silicon carbide has become a potential material for these devices due to its high temperature, high frequency, and high power characteristics. . At present, compared with N-type silicon carbide substrates, high-purity semi-insulating silicon carbide substrates have higher commercial value and sales market. At the same time, due to the strict requirements on nitrogen content, one of the technical difficulties of high-purity semi-insulating silicon carbide substrates is how to reduce the nitrogen content in silicon carbide crystals. [0003] At present, the physical vapor tr...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C30B23/00C30B29/36
CPCC30B23/00C30B29/36
Inventor 刘星李加林刘圆圆周敏
Owner SICC CO LTD