Semiconductor device preparation method

Abstract

The invention provides a semiconductor device preparation method, and relates to the technical field of semiconductors. The method comprises the steps of sequentially forming an oxide layer and a patterned photoresist layer on an aluminum-gallium-arsenic substrate so as to expose the oxide layer located in a hollow region of the patterned photoresist layer; and correcting the side wall of the patterned photoresist layer along the direction vertical to the AlGaAs substrate and pre-bombarding the oxide layer in the hollow area of the patterned photoresist layer by adopting argon; and then, in an argon-containing environment, adopting boron chloride to remove the oxide layer subjected to pre-bombardment so as to expose the aluminum-gallium-arsenic substrate located in the hollow area of the patterned photoresist layer, so that the physical bombardment and the chemical action can be both considered, the side wall of the patterned photoresist layer is steeper, the oxide on the surface of the aluminum-gallium-arsenic substrate is more thoroughly removed, and the uniformity and the etching perpendicularity during the subsequent main etching of the aluminum-gallium-arsenic substrate are improved, and accordingly the performance of the device is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for preparing a semiconductor device. Background technique [0002] Semiconductor devices are devices that use semiconductor materials as working substances. They have many advantages such as small size, high efficiency, long life, and easy integration. Therefore, they are widely used in imaging, communication, machining and other fields. However, with the advancement of technology, there is also a higher demand for semiconductor devices. [0003] The substrate in semiconductor devices is usually affected by environmental factors during the transfer process, and an oxide layer will be formed on its surface, which needs to be removed, and then the substrate is etched. During the etching process, often due to the photoresist The verticality of the sidewall of the substrate is poor, which leads to the poor verticality of the sidewall of the structure formed after th...

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Problems solved by technology

[0003] The substrate in the semiconductor device is usually affected by environmental factors during the transfer process, and an oxide layer will be formed on its surface, which needs to be removed, and then the substrate is etched. During the etching process, often due to the photoresist The verticality of the sidewall of the substrate is poor, which leads to the poor verticality of the sidewall of the structure formed after the substrate is etched, which affects the performance of the device

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