Method for preparing monocrystal two-dimensional transition metal chalcogenide

A transition metal chalcogenide and transition metal technology, which is applied in the field of preparing single crystal two-dimensional transition metal chalcogenide compounds, can solve problems such as existence of grain boundaries and no orientation, and achieve the effects of low cost, few defects and simple method.

Active Publication Date: 2021-05-07
PEKING UNIV
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Problems solved by technology

At present, chemical vapor deposition is the most widely used method. The film prepared

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  • Method for preparing monocrystal two-dimensional transition metal chalcogenide
  • Method for preparing monocrystal two-dimensional transition metal chalcogenide
  • Method for preparing monocrystal two-dimensional transition metal chalcogenide

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Embodiment Construction

[0043] The present invention will be described in further detail below in conjunction with specific examples, but the method is not limited to the following examples.

[0044] The chemical vapor deposition system used in the present invention has three discrete heating zones. Wherein, the distance between every two discontinuous heating regions is 30 cm, and the above distance can also be properly adjusted according to the size of the chemical vapor deposition system itself. When using the chemical vapor deposition system to grow transition metal chalcogenides, the carrier gas is introduced into the chemical vapor deposition system, and the heating area close to the upstream along the direction of the flow of the carrier gas is defined as the upstream temperature zone, and the heating area close to the upstream along the direction of the flow of the carrier gas is defined as the upstream temperature zone. The downstream heating area is defined as the downstream temperature zon...

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Abstract

The invention provides a method for preparing a monocrystal two-dimensional transition metal chalcogenide, which comprises the following steps of: growing a large-area single-crystal two-dimensional transition metal chalcogenide at high temperature by taking a-plane aluminum trioxide with a specific crystal orientation as a substrate, wherein, the specific crystal orientation is <11-20>/<0001>. The two-dimensional transition metal chalcogenide comprises all transition metal chalcogenides such as molybdenum diselenide, molybdenum disulfide and tungsten diselenide. The method solves the problem that the size of the two-dimensional transition metal chalcogenide single crystal prepared by a chemical vapor deposition method is small. The preparation of the single-crystal two-dimensional transition metal chalcogenide is realized through a simple and efficient method.

Description

technical field [0001] The invention relates to a method for preparing a single-crystal two-dimensional transition metal chalcogenide, in particular to a method for growing a large-area single-crystal two-dimensional transition metal chalcogenide using a substrate with a specific crystal orientation. Background technique [0002] Due to their excellent properties, two-dimensional transition metal dichalcogenides (TMDs) have attractive application prospects in the fields of electronics, optoelectronics, and electrocatalysis in the future. However, in order to realize the practical application of these excellent properties, some technical barriers still need to be overcome. One of the biggest challenges is how to prepare large-scale, low-cost, and reproducible single-layer two-dimensional transition metal chalcogenides with uniform orientation. At present, chemical vapor deposition is the most widely used method. The film prepared by this method is polycrystalline, has no spe...

Claims

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Application Information

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IPC IPC(8): C30B29/46C30B25/18
CPCC30B29/46C30B25/18C30B25/186
Inventor 刘开辉王金焕徐小志
Owner PEKING UNIV
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