Device and method for large-scale continuous preparation of vertically oriented graphene by plasma

A vertical orientation and plasma technology, applied in graphene, chemical instruments and methods, inorganic chemistry, etc., to achieve the effect of expanding the area, improving the preparation efficiency, and reducing the use of toxic and corrosive reagents
CN112794316AInactive Publication Date: 2021-05-14ZHEJIANG UNIV HANGZHOU GLOBAL SCI & TECH INNOVATION CENT
3 Cites 4 Cited by

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
ZHEJIANG UNIV HANGZHOU GLOBAL SCI & TECH INNOVATION CENT
Publication Date
2021-05-14
Estimated Expiration
Not applicable · inactive patent

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

The invention discloses a device for large-scale continuous preparation of vertically oriented graphene by plasma. The device comprises a vacuum cavity which is provided with a baffle valve and is connected with a vacuum pump; a radiation heater, a feeding roller, a receiving roller, a supporting roller and a quartz tube which are sequentially mounted in the vacuum cavity from bottom to top; a microwave power supply, a magnetron and a waveguide tube which are sequentially connected, wherein one end of the antenna is fixed in the waveguide tube, the other end of the antenna extends into the quartz tube, and a conical shielding tube sleeves outside the antenna extending into the quartz tube; a substrate material is wound on the feeding roller, penetrates through the supporting roller and is fixed on the receiving roller; the feeding roller and the receiving roller are mounted at the same height; and an infrared thermometer is arranged at the top of the vacuum cavity. The invention also discloses a method for large-scale continuous preparation of the vertically oriented graphene by plasma through the device. The device and the method not only can ensure the high-speed growth of the vertically oriented graphene, but also can realize large-scale, continuous and controllable preparation of the vertically oriented graphene.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The invention relates to the technical field of nanomaterial preparation, in particular to a device and method for large-scale and continuous preparation of vertically oriented graphene by plasma. Background technique

[0002] Low-temperature plasma is a non-equilibrium plasma with high ionization degree and high electron temperature obtained by ionizing gas at a relatively low temperature by direct current, radio frequency or microwave. Low-temperature plasma contains a large number of electrons, radicals and free radicals, and is widely used in the fields of catalysis, etching and surface treatment. Plasma Enhanced Chemical Vapor Deposition (PECVD) technology is a technology that ionizes gas into plasma and utilizes a high concentration of active substances in it to deposit materials on the surface of the substrate material. Compared with the traditional thermal CVD method, low-temperature plasma PECVD technology can achieve high-quality and control...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More