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Device and method for large-scale continuous preparation of vertically oriented graphene by plasma

A vertical orientation and plasma technology, applied in graphene, chemical instruments and methods, inorganic chemistry, etc., to achieve the effect of expanding the area, improving the preparation efficiency, and reducing the use of toxic and corrosive reagents

Inactive Publication Date: 2021-05-14
ZHEJIANG UNIV HANGZHOU GLOBAL SCI & TECH INNOVATION CENT
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] Aiming at the equipment and process problems of large-scale, continuous and rapid continuous preparation of vertically oriented graphene by the current plasma-enhanced chemical vapor deposition technology, the present invention provides a device and method for large-scale and continuous preparation of vertically oriented graphene by plasma, which can ensure vertical High-speed growth of oriented graphene and large-scale and continuous controllable preparation of vertically oriented graphene

Method used

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  • Device and method for large-scale continuous preparation of vertically oriented graphene by plasma
  • Device and method for large-scale continuous preparation of vertically oriented graphene by plasma
  • Device and method for large-scale continuous preparation of vertically oriented graphene by plasma

Examples

Experimental program
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Effect test

Embodiment 1

[0056] Continuous growth of large-area vertically oriented graphene using methane as hydrocarbon gas:

[0057] The plasma vertically aligned graphene preparation device used in this embodiment is as follows: figure 1 , figure 2 and image 3 mentioned. Wherein, the outer diameter of the quartz tube 11 is 30mm, and the wall thickness is 2mm. Among them, there are 4 antennas 9 (linear microwave antennas) that are turned on, and the maximum total power of the microwave power supply 6 is 1 kW, which supplies power for each linear microwave antenna 9 separately.

[0058] 1) Select a nickel foil with a thickness of 20 μm and a width of 20 cm as the base material, wind the nickel foil on the feed roller 12, and fix its rear end around the support roller 13 on the receiving roller 14. Adjust the shaft height of the support roller 13 so that the surface of the nickel foil is 0.7 cm away from the bottom of the quartz tube 11. Turn on the vacuum pump 2, and evacuate until the air pr...

Embodiment 2

[0066] The plasma vertically aligned graphene preparation device used in this embodiment is as follows: figure 1 , figure 2 and image 3 mentioned. Wherein, the outer diameter of the quartz tube 11 is 30mm, and the wall thickness is 2mm. Among them, there are four linear microwave antennas 9 that are turned on, and the maximum total power of the microwave power supply 6 is 1 kW, which supplies power for each linear microwave antenna 9 separately.

[0067]1) Select a nickel foil with a thickness of 20 μm and a width of 20 cm as the base material, wrap the nickel foil on the feed roller 12, and fix its rear end around the support roller 13 on the receiving roller 14. Adjust the axis height of the support roller 13 so that the surface of the nickel foil is 0.7 cm away from the bottom of the quartz tube 11. Turn on the vacuum pump 2, and evacuate until the air pressure inside the vacuum chamber 1 is 2.5Pa;

[0068] 2) Introduce hydrogen gas with a flow rate of 100ml / min into...

Embodiment 3

[0074] The plasma vertically aligned graphene preparation device used in this embodiment is as follows: figure 1 , figure 2 and image 3 mentioned. The outer diameter of the quartz tube 11 is 30 mm, and the wall thickness is 2 mm. Among them, there are 8 linear microwave antennas 9 that are turned on, and the maximum total power of the microwave power supply 6 is 1 kW, which supplies power for each microwave antenna 9 separately.

[0075] 1) Select a nickel foil with a thickness of 20 μm and a width of 20 cm as the base material, wind the nickel foil on the feed roller 12, and fix its rear end around the support roller 13 on the receiving roller. Adjust the shaft height of the support roller 13 so that the surface of the nickel foil is 0.7 cm away from the bottom of the quartz tube 11. Turn on the vacuum pump and evacuate until the air pressure inside the vacuum chamber 1 is 2.5Pa;

[0076] 2) Introduce hydrogen gas with a flow rate of 100ml / min into the vacuum chamber 1...

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Abstract

The invention discloses a device for large-scale continuous preparation of vertically oriented graphene by plasma. The device comprises a vacuum cavity which is provided with a baffle valve and is connected with a vacuum pump; a radiation heater, a feeding roller, a receiving roller, a supporting roller and a quartz tube which are sequentially mounted in the vacuum cavity from bottom to top; a microwave power supply, a magnetron and a waveguide tube which are sequentially connected, wherein one end of the antenna is fixed in the waveguide tube, the other end of the antenna extends into the quartz tube, and a conical shielding tube sleeves outside the antenna extending into the quartz tube; a substrate material is wound on the feeding roller, penetrates through the supporting roller and is fixed on the receiving roller; the feeding roller and the receiving roller are mounted at the same height; and an infrared thermometer is arranged at the top of the vacuum cavity. The invention also discloses a method for large-scale continuous preparation of the vertically oriented graphene by plasma through the device. The device and the method not only can ensure the high-speed growth of the vertically oriented graphene, but also can realize large-scale, continuous and controllable preparation of the vertically oriented graphene.

Description

technical field [0001] The invention relates to the technical field of nanomaterial preparation, in particular to a device and method for large-scale and continuous preparation of vertically oriented graphene by plasma. Background technique [0002] Low-temperature plasma is a non-equilibrium plasma with high ionization degree and high electron temperature obtained by ionizing gas at a relatively low temperature by direct current, radio frequency or microwave. Low-temperature plasma contains a large number of electrons, radicals and free radicals, and is widely used in the fields of catalysis, etching and surface treatment. Plasma Enhanced Chemical Vapor Deposition (PECVD) technology is a technology that ionizes gas into plasma and utilizes a high concentration of active substances in it to deposit materials on the surface of the substrate material. Compared with the traditional thermal CVD method, low-temperature plasma PECVD technology can achieve high-quality and control...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B32/186
CPCC01B32/186C01B2204/04C01B2204/32C01B2204/20
Inventor 薄拯杨化超苏孟翔徐晨轩
Owner ZHEJIANG UNIV HANGZHOU GLOBAL SCI & TECH INNOVATION CENT
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