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A kind of preparation method of boron carbide nanowire

A technology of nanowires and boron carbide, which is applied in the field of preparation of boron carbide nanowires, can solve the problems of low aspect ratio and uneven shape of C nanowires, and achieve the effects of uniform shape, low production cost, and low equipment requirements

Active Publication Date: 2022-02-15
HARBIN INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The present invention will solve existing method and prepare B 4 The aspect ratio of C nanowire is low, the technical problem of uneven appearance, and a kind of preparation method of boron carbide nanowire is provided

Method used

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  • A kind of preparation method of boron carbide nanowire
  • A kind of preparation method of boron carbide nanowire

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Experimental program
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specific Embodiment approach 1

[0026] Specific implementation mode one: a kind of preparation method of boron carbide nanowire in this implementation mode, concretely carry out according to the following steps:

[0027] 1. Dry the boron oxide and boron powder, and mix them evenly to obtain a mixed powder;

[0028] 2. Put the mixed powder obtained in step 1 into the crucible, and heat it in a high-temperature furnace under the condition of an inert atmosphere. Stop feeding the inert gas, and feed the reducing gas to carry out the gas phase reaction to obtain the boron carbide nanowire, and complete the method.

specific Embodiment approach 2

[0029] Embodiment 2: The difference between this embodiment and Embodiment 1 is that the molar ratio of boron oxide and boron powder in Step 1 is (1-10):1. Others are the same as in the first embodiment.

specific Embodiment approach 3

[0030] Embodiment 3: This embodiment differs from Embodiment 1 or Embodiment 2 in that: the drying temperature in step 1 is 50° C. to 150° C., and it is dried to a constant weight. Others are the same as in the first or second embodiment.

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Abstract

A method for preparing boron carbide nanowires, the invention relates to the field of preparation of boron carbide materials, in particular to the preparation technology of boron carbide nanowires, in particular to B 4 C nanowire preparation technology. The present invention will solve existing method and prepare B 4 The technical problems of low purity and uneven morphology of C nanowires. Method: 1. Mixing of raw materials; 2. High temperature heating growth B 4 C nanowires. The boron carbide nanowires prepared by the invention have high purity, high aspect ratio and uniform appearance. The boron carbide nanowires prepared by the invention are used to improve the strength of ceramics, metals, resins and other materials.

Description

technical field [0001] The invention relates to the field of boron carbide material preparation, in particular to the preparation technology of boron carbide nanowires. Background technique [0002] B 4 C was first discovered in 1858 and has the stoichiometric formula B 4 The compound of C was not recognized until 1934. B 4 C has a higher melting point, higher hardness, good wear resistance, acid and alkali corrosion resistance, low density and high thermal neutron absorption capacity due to the nature of its covalent bond. Its hardness is second only to diamond and cubic boron nitride. It is a non-metallic material with important physical and chemical properties. B 4 C has the property of high-temperature extraordinary hardness, and is widely used in fields such as body armor and abrasive appliances. B 4 C is the lightest ceramic material. Due to its low density, it can be used as jet blades and is widely used in the field of aerospace. Because of its strong neutron...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B32/991B82Y40/00
CPCC01B32/991B82Y40/00C01P2002/72C01P2004/03
Inventor 王志江
Owner HARBIN INST OF TECH
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