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Cavity interconnection based deposition method and deposition equipment

A deposition equipment, cavity technology, applied in gaseous chemical plating, metal material coating process, coating and other directions

Active Publication Date: 2021-05-18
ADVANCED MATERIALS TECH & ENG INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

But so far, there is no effective way to solve the above technical problems in the prior art

Method used

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  • Cavity interconnection based deposition method and deposition equipment
  • Cavity interconnection based deposition method and deposition equipment
  • Cavity interconnection based deposition method and deposition equipment

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specific Embodiment 1

[0051] see figure 1 , the present invention provides a technical solution: a deposition device based on chamber interconnection, which adopts ALD technology, and includes a vacuum distribution platform (1), at least two reaction chamber groups (2), a loading chamber (3), At least one thermal atomic layer deposition chamber (4), at least one pre-cleaning chamber (5), at least one thermal treatment chamber (6) and a deployment manager (7);

[0052] Wherein; the reaction chamber group (2), loading chamber (3), thermal atomic layer deposition chamber (4) pre-cleaning chamber (5) and heat treatment chamber (6) to surround the vacuum distribution platform ( 1) arrangement; the vacuum distribution platform (1) maintains a vacuum and dust-free environment, including an automatic delivery robot (8), and the automatic delivery robot (8) is connected to the deployment manager (7) for data communication, The automatic conveying robot (8) is used in the reaction chamber group (2), the loa...

specific Embodiment 2

[0066] On the other hand, the present application also provides a deposition method based on cavity interconnection, including deposition equipment based on cavity interconnection, and the specific wafer processing method is as follows;

[0067] Step S1, rationally configure the number of reaction chamber group 2, loading chamber 3, thermal atomic layer deposition chamber 4, pre-cleaning chamber 5 and heat treatment chamber 6 according to the current process, assemble them, and debug the vacuum configuration Platform 1, reaction chamber group 2, loading chamber 3, thermal atomic layer deposition chamber 4, pre-cleaning chamber 5, heat treatment chamber 6 and deployment manager 7, so that the deposition equipment based on chamber interconnection works normally ;

[0068] Step S2, adding the wafer base material into the deposition equipment based on cavity interconnection, and the deposition equipment based on cavity interconnection starts the wafer process work;

[0069] Step ...

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Abstract

The invention discloses cavity interconnection based deposition equipment. The deposition equipment comprises a vacuum allocation platform (1), at least two reaction chamber sets (2), a loading cavity (3), at least one thermal atomic layer deposition chamber (4), at least one pre-cleaning chamber (5), at least one heat treatment chamber (6) and an allocation manager (7), The reaction chamber sets (2), the loading cavity (3), the thermal atomic layer deposition chambers (4), the pre-cleaning chambers (5) and the heat treatment chambers (6) are arranged in a manner of surrounding the vacuum allocation platform (1). An automatic conveying robot (8) is in data communication connection with the allocation manager (7), and the automatic conveying robot (8) is used for allocating and transmitting wafer substrates among the reaction chamber sets (2), the loading cavity (3), the thermal atomic layer deposition chambers (4), the pre-cleaning chambers (5) and the heat treatment chambers (6). By means of a magnetic suspension process scanning sensing system, up-down floating can be achieved, and therefore comprehensive reaction chambers can be better scanned, and the corresponding reaction chambers can be better monitored.

Description

technical field [0001] The invention relates to the technical field of atomic layer deposition, in particular to a deposition method and deposition equipment based on cavity interconnection. Background technique [0002] Atomic layer deposition (ALD), also known as atomic layer deposition or atomic layer epitaxy, is a method that can coat substances layer by layer on the surface of a substrate in the form of a single atomic film. . Atomic layer deposition is similar to ordinary chemical deposition. Different from ordinary CVD or PECVD principles, ALD can deposit ultra-thin, high-aspect-ratio films. By adding precursors to the vacuum chamber step by step during the process cycle, the precise control of the film thickness can be achieved, which can be used to deposit Al 2 o 3 , HfO 2 , ZrO 2 、TiO 2 , TiN, TaN and ALN and other thin films. It was originally proposed by Finnish scientists and used in polycrystalline fluorescent materials ZnS: Mn and amorphous Al 2 o 3 ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/54C23C16/52C23C16/455C23C16/40
CPCC23C16/54C23C16/52C23C16/45544C23C16/403
Inventor 廖海涛
Owner ADVANCED MATERIALS TECH & ENG INC
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