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Filter disc for X-ray and soft X-ray wave bands and preparation method thereof

An X-ray and filter technology, applied in the field of X-ray and soft X-ray filters and their preparation, can solve the problems of high cost and complicated operation

Active Publication Date: 2021-05-18
苏州闻道电子科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The above-mentioned methods are experimental methods adopted for the different beamline station structures of each experimental station, and the structure of the beamline and the experimental station needs to be changed, which has the problems of complicated operation and high cost

Method used

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  • Filter disc for X-ray and soft X-ray wave bands and preparation method thereof
  • Filter disc for X-ray and soft X-ray wave bands and preparation method thereof
  • Filter disc for X-ray and soft X-ray wave bands and preparation method thereof

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preparation example Construction

[0032] The present invention also provides a preparation method of the filter sheet described in the above technical solution, comprising the following steps:

[0033] A polyimide film is deposited on the polished surface of the silicon wafer by thermal evaporation, and then the non-polished surface of the silicon wafer is etched to expose the polyimide film, and then magnetron sputtering is used on the exposed surface. The surface of the polyimide film is followed by Sc layer and B 4 Coating of layer C to obtain the filter disc.

[0034] In the present invention, the magnetron sputtering coating preferably uses Sc target and B 4 C target, the sputtering power of the Sc target is preferably 60W, the B 4 The sputtering power of the C target is preferably 120W.

[0035] In the present invention, the sputtering pressure of the magnetron sputtering coating is preferably 0.1-0.5Pa, more preferably 0.3-0.4Pa.

[0036] In the present invention, the background vacuum degree of the...

Embodiment 1

[0043] A filter for X-ray and soft X-ray bands, comprising alternately stacked Sc layers and B 4 C layer, the number of cycles of alternate lamination is 20 times, the thickness of each layer of Sc layer is 240nm, each layer of B 4 The thickness of layer C is 36nm, and the filter also includes a polyimide film as a self-supporting film with a thickness of 1.7 μm.

[0044] The preparation method is as follows:

[0045] First, a layer of PI film with a thickness of 1.7 μm is deposited on the polished surface of the silicon wafer by thermal evaporation, and the non-polished surface of the silicon wafer is first etched to form a circular groove area of ​​the required filter size. The diameter of the circular groove is 10 mm. The silicon in the circular groove is completely etched, and the PI film is exposed, and then the Sc / B film is deposited by magnetron sputtering. 4 C (Sc: 4.8 μm, B 4 C: 0.72 μm) deposited on PI film, Sc / B 4 The C film is divided into 20 cycles in total, and...

Embodiment 2

[0051] A filter for X-ray and soft X-ray bands is the same as in Embodiment 1.

[0052] The preparation method is as follows:

[0053] Etch a circular groove area with a diameter of 5mm on the non-polished surface of the silicon wafer, and then expose the PI film, and then sputter-deposit Sc / B on the PI film 4 C, the whole process is divided into 20 cycles, Sc target and B in the process of magnetron sputtering 4 The sputtering power of the C target is 60W and 100W, and the spacer thickness is 48nm and 7.2nm, respectively, using this method to deposit Sc / B on the PI film 4 At C, the PI film rupture was significantly reduced, and the PI film and Sc / B 4 The yield of C composite filter is greatly improved. The advantage of this preparation method is that the circular groove-shaped area etched on the silicon wafer is small, and the Sc / B is deposited on the PI film. 4 C, the stress on the PI film is not enough to cause it to rupture, and more heat generated during the sputterin...

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Abstract

The invention provides a filter disc for X-ray and soft X-ray energy bands and a preparation method of the filter disc, and belongs to the technical field of optical elements. The transmissivity of the filter disc containing an Sc layer is obviously compared before and after the K absorption edge is 0.276 nm (E=4500 eV) and the L absorption edge is 2.48 nm (E=500 eV). Due to the fact that the absorption edge of B is 190 eV, the filter disc provided by the invention can effectively restrain higher harmonics within the range of 0.276 nm to 0.31 nm (4000eV to 4500 eV) and the range of 2.48 nm to 6.53 nm (190 eV to 500 eV). According to the preparation method of the filter disc provided by the invention, a silicon wafer is etched firstly and then film coating is conducted, so that the obtained filter disc is high in quality and free of a sand hole phenomenon. The data of the embodiment shows that sand holes cannot be observed in the Sc / B4C filter disc or the self-supporting Sc / B4C filter disc (containing a polyimide film) prepared by the invention.

Description

technical field [0001] The invention relates to the technical field of optical elements, in particular to a filter for X-ray and soft X-ray bands and a preparation method thereof. Background technique [0002] The X-ray and soft X-ray bands cover the resonance lines of most elements, and have short wavelengths and strong penetration, which can achieve non-destructive measurement. Therefore, this band is an important research field in the fields of biology, medicine, materials, physics and chemistry. tool. With the rapid development of high-brightness synchrotron radiation sources, scientists from all over the world are increasingly interested in the characterization of the optical properties of materials in this band. The continuous spectrum produced by synchrotron radiation is always inevitably mixed with high-order harmonics λ of the fundamental wave λ after passing through the monochromator n =λ / n, which affects the test results, so filters are often used to eliminate h...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G21K1/10C23C14/06C23C14/12C23C14/20C23C14/24C23C14/35
CPCG21K1/10C23C14/35C23C14/205C23C14/0635C23C14/24C23C14/12
Inventor 陈溢祺朱忆雪张秀霞金宇朱东风朱运平金长利
Owner 苏州闻道电子科技有限公司
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