Silicon chip process method of high-precision pressure sensor

Abstract

The invention discloses a silicon chip process method of a high-precision pressure sensor, which adopts a deep groove etching process commonly used in a CMOS (Complementary Metal Oxide Semiconductor) integrated circuit to improve the sensitivity of a chip. A <110> crystal orientation silicon substrate material is adopted, the thermal resistance coefficient of the chip is reduced, compared with a conventional pressure sensor process, the device parameter performance is improved, the manufacturing cost is reduced, meanwhile, the chip process is compatible with an MOS reference process, the process operation is simple, the processing cost is reduced, safety and reliability are achieved, and the product process is easy to popularize and apply.

Description

technical field [0001] The invention relates to the technical field of chip structure of a high-precision pressure sensor, in particular to a silicon chip process method of a high-precision pressure sensor. Background technique [0002] As a means of measuring various mechanical quantities such as pressure, force, flow, flow velocity and acceleration, silicon pressure sensors are widely used in many important fields of national economy and national defense construction. Due to their unique integration advantages, with the rapid development of computers With the emergence of system integration technology, its application range is getting wider and wider. At present, the most commonly used method for manufacturing single crystal silicon pressure sensors is to use double-sided processing technology to obtain pressure-sensitive films through back etching. The alignment accuracy of the components and the pressure chamber is not only affected by the double-sided lithography machi...

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Problems solved by technology

At present, the most commonly used method for manufacturing single crystal silicon pressure sensors is to use double-sided processing technology to obtain pressure-sensitive films through back etching. The alignment accuracy of components and pressure chambers is not only affected by the double-sided lithography machine, but also by electrochemical corrosion. At the same time, long-term back corrosion will affect the performance of front pressure-sensitive elements and integrated circuits

This process method is difficult to manufacture small pressure sensors. Because the backside corrosion occupies the area, the utilization rate of silicon wafers is low. In order to improve the temperature characteristics, electrostatic fusing is required, and the process is very complicated; One-sided polished wafers or double-sided polished epiwafers, making them costly

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