30results about How to "Lower thermal resistivity" patented technology

A semiconductor light-emitting device having a thinned structure comprises a thinned structure formed between a semiconductor light-emitting structure and a carrier. The manufacturing method comprises the steps of forming a semiconductor light-emitting structure above a substrate; attaching the semiconductor light-emitting structure to a support; thinning the substrate to form a thinned structure; forming or attaching a carrier to the thinned substrate; and removing the support.

The present invention is directed to a hybrid coupler device that includes a first transmission line structure and a second transmission line structure. The first transmission line structure is interdigitally coupled with the second transmission line structure such that each transmission line in the second transmission line structure is disposed adjacent to a transmission line in the first transmission line structure. The coupling or the mutual capacitance C_d between the transmission lines of the present invention need not be equal; in fact, they all can be different.

The invention discloses an environmental-friendly power cable which comprises a core wire, an aluminum tape layer lapping outside the core wire and steel-tape armoring arranged outside the aluminum tape layer, wherein the gap between the core wire and the aluminum tape layer is provided with silicon carbide mineral composite fillers, a polyethylene inner sheath is arranged between the aluminum tape layer and the steel-tape armoring, and a polyethylene outer sheath is arranged outside the steel-tape armoring. The invention has the advantages of good heat radiation property, long service life, strong flame retarding property, electricity saving, no toxicity and environmental protection.

A semiconductor device includes at least one device active region formed in a first surface of a semiconductor substrate, an electrical contact layer on a second surface of the semiconductor substrate, and at least one resistivity-lowering body positioned in a corresponding recess in the substrate and connected to the electrical contact layer. The body preferably comprises a material having an electrical resistivity lower than an electrical resistivity of the semiconductor substrate to thereby lower an effective electrical resistivity of the substrate. The device active region may be an active region of a power control device, such as a MOSFET or IGBT, for example. The body may preferably comprise an electrical conductor such as copper, aluminum, silver, solder, or doped polysilicon. The at least one recess and associated resistivity-lower body preferably defines a proportion of the semiconductor substrate area adjacent the device active region greater than about 0.4 percent, and may extend into the semiconductor substrate a distance greater than about 25 percent of a thickness of the substrate.

A field-effect transistor (FET) in which a gate electrode is located between a source electrode formed on one side of the gate electrode and a drain electrode formed on the other side, a source ohmic contact is formed under the source electrode and a drain ohmic contact is formed under the drain electrode. In the FET, the rise in the channel temperature is suppressed, the parasitic capacitance with a substrate is decreased, and the temperature dependence of drain efficiency is reduced, so that highly efficient operation can be achieved at high temperatures. The drain electrode is divided into a plurality of drain sub-electrodes spaced from each other and an insulating region is formed between the drain ohmic contacts formed under the drain sub-electrodes.

The invention relates to a packaging-free UVLED solidification light source module which comprises a silicon substrate. The packaging-free UVLED solidification light source module is characterized in that the front face of the silicon substrate is provided with a reflecting interconnection layer, and the upper surface of the reflecting interconnection layer is provided with a plurality of sets of positive and negative eutectic layers which are composed of P eutectic electrodes and N eutectic electrodes and provided with LED chips; the surfaces of the LED chips are covered with pouring sealants, and the LED chips are formed by integrating the LED chips with four wavelengths of 365 nm, 380 nm, 395 nm and 405 nm according to a ratio of 1:1:1:1; the back face of the silicon substrate is connected with a water cooling radiator through a welding layer, and the water cooling radiator is provided with a water inlet pipe and a water outlet pipe. Due to driving currents of the chips with the different wavelengths, the requirements for solidification wavelength and energy ratio of the majority of UV ink and glue can be met, the test heat resistance coefficient of the test light source module is lower than 3 DEG C/W, and the maximum driving power of the single LED chip can reach 5 W.

A composite heat sink of an electrical circuit comprises a radiator. One side of the radiator is provided with a plurality of radiating fins and the other side thereof is provided with a thermally conductive insulating layer. The thermally conductive insulating layer contains uniformly distributed thermally conductive powder. An electrical circuit layer is arranged on the thermally conductive insulating layer and contains uniformly distributed plastic materials and low-impedance electrically conductive powder. The electrical circuit layer is provided with connection points so that the electrical circuit layer can be electrically connected with an electronic component via the connection points. An insulating paint layer is arranged outside the thermally conductive insulating layer and the electrical circuit layer and has anti-soldering effect, so that the component or IC with heat source on the circuit can directly diffuse to rapidly dissipate heat in an overall manner to substantially reduce the thermal resistivity and ensure the effectivity and service lives of the electrical and electronic components.

A semiconductor device includes at least one device active region formed in a first surface of a semiconductor substrate, an electrical contact layer on a second surface of the semiconductor substrate, and at least one resistivity-lowering body positioned in a corresponding recess in the substrate and connected to the electrical contact layer. The body preferably comprises a material having an electrical resistivity lower than an electrical resistivity of the semiconductor substrate to thereby lower an effective electrical resistivity of the substrate. The device active region may be an active region of a power control device, such as a MOSFET or IGBT, for example. The body may preferably comprise an electrical conductor such as copper, aluminum, silver, solder, or doped polysilicon. The at least one recess and associated resistivity-lowering body preferably defines a proportion of the semiconductor substrate area adjacent the device active region greater than about 0.4 percent, and may extend into the semiconductor substrate a distance greater than about 25 percent of a thickness of the substrate.

A complete power management system implemented in a single surface mount package. The system may be drawn to a DC to DC converter system and includes, in a leadless surface mount package, a driver/controller, a MOSFET transistor, passive components (e.g., inductor, capacitor, resistor), and optionally a diode. The MOSFET transistor may be replaced with an insulated gate bipolar transistor, IGBT in various embodiments. The system may also be a power management system, a smart power module or a motion control system. The passive components may be connected between the leadframe connections. The active components may be coupled to the leadframe using metal clip bonding techniques. In one embodiment, an exposed metal bottom may act as an effective heat sink.

The invention provides a preparation device of a vapor chamber wick, which has the advantages of thin structure, low thermal resistance coefficient, high heat dissipation power, simplified process, stable quality, low equipment and processing cost, reduced reject ratio of manufacture and the like, and is not easy to be damaged due to the overlarge thin plate during electroplating. And upward bending deformation is caused by liquid resistance when the battery is placed in electrolyte.

The invention discloses a novel reinforced extra-high-voltage power cable. The power cable comprises a conductor arranged in the center of the cable; the conductor is wrapped with an inner semi-conducting shielding layer, a crosslinked polyethylene insulating layer, and an outer semi-conducting shielding layer in sequence; the outer semi-conducting shielding layer is extruded with a semi-conducting buffering layer, a corrugated aluminum sheath, and a non-metal sheath; the outermost layer of the cable is extruded with a graphite coating layer; five circular reinforced cores are arranged in the conductor along the inner edge of the conductor; and a quinquelateral arc-shaped reinforced core is arranged among the five circular reinforced cores. The semi-conducting buffering layer provided by the invention adopts an extruded semi-conducting silicone rubber structure so as to reduce sealed and stationary air amount in the buffering layer and to ensure the compactness of the cable structure, so that the carrying capacity of the cable can be effectively improved.

The invention relates to a waterproof fixing device for a high-water-resistance HJT photovoltaic cell, and the device comprises a main frame, the middle part of the upper end of the main frame is provided with a photovoltaic cell, the outer surface of the upper end of the main frame is provided with a sealing glass plate, the periphery of the main frame is flush with the periphery of the sealing glass plate, and the periphery of the sealing glass plate is connected with a second sealing frame in a sealing manner. A first sealing frame is installed on the outer surface of the second sealing frame, a heat dissipation plate is installed in the middle of the lower end of the main frame, heat dissipation fans are installed on the two sides, close to the heat dissipation plate, of the lower end face of the main frame, and storage openings used for storing the heat dissipation fans are formed in the two sides, close to the heat dissipation fans, of the lower end face of the main frame. A sealing mechanism used for sealing the storage opening is installed at the storage opening of the main frame, and it is ensured that water is completely isolated. Heat is taken away through the heat conduction plate, the heat dissipation fins and the heat dissipation fan, and temperature control is carried out, so that the service life of the HJT photovoltaic cell is prevented from being shortened due to too high temperature.

An electric heating device includes an electric control device with a control housing that is in structural unity with a housing of a power section. The power section has a frame forming a heating chamber. At least one PTC heating device with at least one PTC element and conductor elements is provided in the heating chamber. The control housing forms a chamber which is separated from the frame by a partition wall. A heat sink projects from the partition wall into the power section. The electric control device has a printed circuit board and at least one power switch which generates a power loss and which is connected in a heat-conducting manner to a surface of a heat sink. An electrically insulating layer and a spring element, which holds the power switch applied under pretension against the surface of the heat sink, are provided between the power switch and the heat sink.