Electrostatic resonator based on periodic elastic wave reflection structure

Abstract

The invention provides an electrostatic resonator based on a periodic elastic wave reflection structure. The electrostatic resonator comprises a resonance unit; an electrode electrically connected with the resonance unit; a dielectric layer arranged between the resonance unit and the electrode; a supporting structure, wherein one end of the supporting structure is connected with the resonance unit, and the other end of the supporting structure is fixed on the substrate; the substrate comprises at least one layered structure; the periodic elastic wave reflection structure is arranged on the substrate; the periodic elastic wave reflection structure comprises at least one minimum repetitive unit, and the minimum repetitive unit is of a hole-shaped structure. The periodic elastic wave reflection structure can form a stop band on the resonator substrate, thereby further reducing the loss of the resonator anchor point, and greatly and stably improving the quality factor of the resonator. The resonator has universality, and solves the bottleneck problem that the MEMS resonator keeps a relatively high quality factor under high frequency.

Description

technical field [0001] The present disclosure relates to radio frequency micro-electromechanical systems, and in particular to an electrostatic high-quality factor resonator based on a periodic elastic wave reflection structure. Background technique [0002] The future wireless communication system presents the development trend of integration, miniaturization, low power consumption, high frequency, and multi-mode. The RF front-end transceiver system has the preprocessing function of RF signals and is an important part of the wireless communication system. The RF resonant devices used in traditional RF front-end transceiver systems mainly include quartz crystal oscillators, surface acoustic wave (SAW) filters, film bulk acoustic resonators (FBAR), ceramic filters, LC resonant circuits, etc. However, there are many limiting factors in the volume, performance, and power consumption of this traditional radio frequency device. For example, the resonance frequency of FBAR is dete...

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Problems solved by technology

However, at higher frequencies, the device geometry is smaller. In order to achieve a higher quality factor, the size of the support structure needs to be further reduced, which is limited by the precision of the lithography process.

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